PN and SOI wafer flow process for stencil mask fabrication

Butschke, Joerg; Ehrmann, Albrecht; Haugeneder, E.; Irmscher, Mathias; Kaesmaier, Rainer; Kragler, K.; Letzkus, Florian; Loeschner, Hans; Mathuni, Josef; Rangelow, Ivo W.; Reuter, Carsten; Shi, Frank G.; Springer, Reinhard

doi:10.1117/12.346224

Cited by 14 publications

(8 citation statements)

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“…The main success of this first fabrication was the fact, that existing chip manufacturing process steps of the high-volume facility could be used and no special process development was necessary, except the very last step of Si membrane etching which was done with a process as described in earlier papers on our 6" stencil mask development [7]. The structures on the first 8" stencil mask have structure sizes in the order of 200nm.…”

Section: Asml Alignment Systemmentioning

confidence: 99%

<title>Ion projection lithography: progress in mask and tool technology</title>

2000

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Ion Projection Lithography is one of the major competitors for sub lOOnm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained.The exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to he presented.Mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.

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Section: Asml Alignment Systemmentioning

confidence: 99%

<title>Ion projection lithography: progress in mask and tool technology</title>

2000

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“…16. The wafer consists of a 340-nm thin silicon layer on top of 400 nm of silicon oxide, 500 μm of bulk silicon, and a silicon nitride etch mask on the backside.…”

Section: A Sample Fabricationmentioning

confidence: 99%

Mode shape and dispersion relation of bending waves in thin silicon membranes

et al. 2012

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We study the vibrational behavior of silicon membranes with a thickness of a few hundred nanometers and macroscopic lateral size. A piezo is used to couple in transverse vibrations, which we monitor with a phase-shift interferometer using stroboscopic light. The observed wave pattern of the membrane deflection is a superposition of the mode corresponding to the excitation frequency and several higher harmonics. Using a Fourier transformation in time, we separate these contributions and image up to the eighth harmonic of the excitation frequency. With this method we determine the dispersion relation of membrane oscillations in a frequency range up to 12 MHz. We develop a simple analytical model combining stress of a membrane and bending of a thin plate that describes both the experimental data and finite-elements simulations very well. We derive correction terms to account for a finite curvature of the membrane and for the inertia of the surrounding atmosphere. A simple criterion for the transition between stressed membrane and thin plate behavior is presented.

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“…Our fabrication process is similar to the one described in Ref. 9. After having produced the membranes with a size of 0.6ϫ 0.6 mm 2 , we cover the wafers with the membranes with a 100 nm thin layer of polyimide ͑T-10001 from Brewer Science Inc.͒ using an adhesion promoter APX-K1 from the same company.…”

Section: Sample Fabrication Proceduresmentioning

confidence: 99%

Nanofabricated adjustable multicontact devices on membranes

Waitz

Schecker

Scheer

2008

Review of Scientific Instruments

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Adjustable atomic size contacts realized by break junctions have become a standard tool during the last decade. Although nanofabricated break junctions may in principle be incorporated onto complex electronic circuits, a fundamental drawback of the standard break junction technique is its limitation to a single adjustable junction per device. We have fabricated single break junctions as well as devices containing two break junctions on a silicon membrane. The junctions are adjusted by positioning a fine tip via piezocontrol on the rear side of the membrane. We describe the fabrication process of the membranes and the devices and present results obtained on circuits made of gold and platinum. We show that the junctions can be addressed independently by a suitable choice of the tip position. Single-atom contacts, vacuum tunneling contacts as well as larger contacts can be stabilized.

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PN and SOI wafer flow process for stencil mask fabrication

Cited by 14 publications

References 0 publications

<title>Ion projection lithography: progress in mask and tool technology</title>

<title>Ion projection lithography: progress in mask and tool technology</title>

Mode shape and dispersion relation of bending waves in thin silicon membranes

Nanofabricated adjustable multicontact devices on membranes

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