Point defects and non-stoichiometry in HgSe

Kumazaki, K.; Matsushima, Eiichi; Odajima, Akira

doi:10.1002/pssa.2210370229

Cited by 24 publications

(9 citation statements)

References 24 publications

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“…Large-grained HgSe ingots were grown from the elements (99.999% purity) by the Bridgman method in the same manner as described by Kuniazaki et al [13]. The samples cut to size (10 mm diameter x 1.5 mm) were mechanically polished, the final polish being obtained with 0.1 ym dimaeter particle alumina abrasive.…”

Section: Samples and Measurementsmentioning

confidence: 99%

Dielectric function in HgSe at 2, 95, and 300 K

Manabe

Nougchi

Mitsuishi

1978

Physica Status Solidi (b)

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Reflectivity spectra of n-HgSe with various carrier concentrations are measured in the spectral region 20 to 500 cm-l. Their main features are well explained by the theoretical dielectric function which is constructed as a sum of r8-r8 interband, intraband, and phonon contributions and is calculated using the available values of band parameters in the full Kane theory. The effect of the interband contribution on the plasmon-LO phonon coupling and on the frequency of LO phonon is discussed. Possible origins for the discrepancy between experimental and calculated spectra are also discussed.Reflexionsspektren von n-HgSe mit verschiedenen Elektronenkonzentrationen werden im Spektralbereich von 20 bis 500 cm-l gemessen. Der vorwiegende Verlauf wird mit der theoretischen dielektrischen Funktion gut erkliirt, die als Summe aus r8-r8-Interband-, Intraband-und PhononBeitriigen angesetzt wird und die mit verfiigbaren Werten der Parameter mittels der Kaneschen Theorie berechnet wird. Es wird der EinfluB des Interband-Beitrags auf die Plasmon-LO-PhononKopplung und auf die Frequenz des LO-Phonons diskutiert. Der mogliche Ursprung fur die Diskrepanz zwischen experimentellen und berechneten Spektren wird ebenfalls diskutiert.

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Section: Samples and Measurementsmentioning

confidence: 99%

Dielectric function in HgSe at 2, 95, and 300 K

Manabe

Nougchi

Mitsuishi

1978

Physica Status Solidi (b)

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“…The background concentration could either be reduced or increased by annealing under various conditions, suggesting the presence of native defects such as vacancies and interstitials. 5 Sources of these donor defects need to be identified so that a process to eliminate them either during growth or through postgrowth annealing can be developed.…”

Section: Introductionmentioning

confidence: 99%

Mercury cadmium selenide for infrared detection

Doyle

Swartz

Dinan

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…27 The dominant point defects in HgSe, indicated by thermodynamic analysis, are Hg interstitials and Schottky vacancies. HgSe is an n-type semimetal with charge carriers generated by ionized donor-type defects.…”

Section: Discussionmentioning

confidence: 99%

Ex situ formation of HgSe electrical contacts to p-ZnSe

Fijol

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A novel method of forming semimetal HgSe electrical contacts to p-type ZnSe through an ex situ growth process has been developed. The ex situ process consisted of deposition of an amorphous Se capping layer on p-ZnSe prior to removal from the molecular beam epitaxy ͑MBE͒ growth chamber. This capping layer protected the p-ZnSe from contamination and oxidation upon removal from the MBE growth chamber. This capping layer was reacted with Hg to form HgSe by heating to 150°C for ϳ15 min in Hg vapor. Transmission electron microscopy and x-ray diffraction data showed that the cubic HgSe phase was formed. Auger sputter depth profiling data were consistent with the formation of stoichiometric HgSe. The electrical characteristics of the contacts were studied using temperature dependent I -V measurements which showed that thermionic emission dominated conduction across the interface for low reverse biases ͑V R Ͻ2.5 V͒. However, thermionic field emission dominated conduction for V R Ͼ2.5 V. The barrier height for thermionic emission and the energy parameter for tunneling were determined to be ϳ0.55 and 0.0076 eV, respectively, consistent with an unpinned Fermi level.

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Point defects and non-stoichiometry in HgSe

Cited by 24 publications

References 24 publications

Dielectric function in HgSe at 2, 95, and 300 K

Dielectric function in HgSe at 2, 95, and 300 K

Mercury cadmium selenide for infrared detection

Ex situ formation of HgSe electrical contacts to p-ZnSe

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