Point Defects and Physico-Chemical Properties of Crystals in Pb-Bi-Te System

Abstract

Within crystalquasichemical formalism models of point defects of crystals in the Pb-BiTe system have been specified considering the amphoteric action of impurities in bismuth doped lead telluride PbTe:Bi, and solid solution formation mechanisms for РbТе-ВіТе and РbТе-Ві 2 Те 3 have been examined. Dependences of Hall concentration and the concentration of point defects on the composition and the initial deviation from stoichiometry in the basic matrix have been calculated.

Electrical properties of CdTe<Ca> thin layers

“…5). Ca, being an element of group II, plays the role of an isovalent impurity in cadmium telluride, which does not always form local levels in the band gap of a semiconductor, but can stimulate the generation of own point defects of the donor or acceptor type [5].…”

“…For qualitative description of defect formation in the crystal structures, it is convenient to use the method of crystalloquasichemical analysis that was successfully implemented for modelling the defect subsystem of crystals in systems based on lead telluride [5]. Crystalloquasichemical approach is based on the superposition of crystalloquasichemical clusters of basic and doping compounds [6,7].…”

Електричні Властивості Тонких Плівок Кадмій Телуриду Легованих Кальцієм Та Літієм

“…For qualitative description of defect formation in the crystal structures, it is convenient to use the method of crystalloquasichemical analysis that was successfully implemented for modelling the defect subsystem of crystals in systems based on lead telluride [8]. Crystalloquasichemical approach is based on the superposition of crystalloquasichemical clusters of basic and doping compounds [9].…”