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The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

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Within crystalquasichemical formalism models of point defects of crystals in the Pb-BiTe system have been specified considering the amphoteric action of impurities in bismuth doped lead telluride PbTe:Bi, and solid solution formation mechanisms for РbТе-ВіТе and РbТе-Ві 2 Те 3 have been examined. Dependences of Hall concentration and the concentration of point defects on the composition and the initial deviation from stoichiometry in the basic matrix have been calculated.