An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the prospect of large-scale production of competitive CdTe solar modules. The physical and technical problems of increasing the efficiency of CdS/CdTe heterostructure solar cells, which are significantly inferior to the theoretically possible value in mass production, are discussed. The state of CdTe thin-film solar cells, which make CdTe a suitable material for ground-based photoelectric conversion of solar energy, the historical development of the CdTe compound, the application of CdTe thin films, the main methods and strategies of device production, device analysis and fundamental problems related to the future development of thin-film modules based on cadmium telluride.

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The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

The thermal treatment effect on optical properties of cadmium telluride thin films was studied. By comparison of the optical transmission spectra and reflection of original and annealed films the formation of modified surfaces was detected. The possibility to get the intense photoluminescence, forming by the band-to-band recombination and transitions as a result of energy dimensional quantization of charge carriers was identified.

Developed a comprehensive system for generating of electric energy "Thermoelectric generator -solar collector". The Sb doped PbTe (n-type of conductivity) and triple compound PbSnTe (p-type of conductivity) were synthesized as basic materials for thermocouples.