Materials such as cadmium telluride (CdTe), copper indium gallium selenide (CIGSe), and copper zinc tin selenide (CZTSe) with higher absorption coefficient are trying to make headway in the competitive photovoltaic market covered mainly by silicon materials. [1] The most important key factors of those emerging semiconductors are the cost-effective mass production, together with high photovoltaic conversion factor (PCE) and long-term stability. Despite CdTe and CIGSe are already industrialized, and their PCE is reaching the commercial silicon ones, the kesterite (CZTSe) is still an emerging technology with high absorption and low raw material cost. But one of its main bottlenecks is its hidden capability to be manufactured at large scale with reasonably good quality. [2] The CZTSe has the properties desired for photovoltaic materials to be selected as potential p-type semiconductors: direct bandgap, high absorption coefficient (10 4 cm À1 in the visible light range), and optical bandgap energy of the range 1.4-1.5 eV, close to the optimum singlejunction value predicted by Shockley-Queisser model. Today, CZTSe is considered a good competitor for CIGSbased solar cells. CZTSe is described by the structural model of two natural minerals: stannite (space group I-42 m) and kesterite (space group I-4). [3][4][5] These structures are very similar: in both structures the cations are located on tetrahedral sites, but their distributions on planes perpendicular to the x-axis are not the same. Additionally, the position of the chalcogen atom is slightly different in both structures. Design and manufacturing of high efficiency CZTSe solar cells need high accuracy in the composition of the absorber material: slight modifications in composition, structural electronic, and defect properties of the alloys have a high impact in the bandgap energy. [6] CZTSe solar cells have achieved the highest efficiency of 12.6%, [7] which is still far from the offered by CIGS-based solar cells: 23.35%. [8] It has known that this limitation is mainly related with the short minority carrier lifetime and the high series resistance imposed by the contact barrier due to the formation of the MoSe 2 at the CZTSe/Mo interface. The presence of secondary phases and defect states in the absorber also increases the recombination rate. [9,10] The influence of the deposition method on the structure, morphology, optical, and electrical properties of CZTSe has been investigated by other researchers: sputtering, thermal evaporation, spray pyrolysis, electrodeposition, dip coating, SILAR method, spin coating, sol-gel, solvothermal method, and chemical bath deposition (CBD). [1] In all of these techniques, the control of the presence of secondary phases is the major critical issue, so the final performance of the device is dependent on the manufacturing route selected: the highest conversion efficiency of CZTS achieved using vacuum techniques such as