Point Defects in Semiconductors I

Lannoo, M.; Bourgoin, J. C.

doi:10.1007/978-3-642-81574-4

Cited by 356 publications

(156 citation statements)

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“…Since g ⊥ is larger than g e , the term (1/E b -1/E a ) is positive and E b <E a . A localization of the defect state is expected to lead to a deepening of its energy level, 69,70 i.e. an increase of E b and a decrease of E a , which would lower the (1/E b -1/E a ) term in Eq.…”

Section: 54mentioning

confidence: 99%

Oxidation of freestanding silicon nanocrystals probed with electron spin resonance of interfacial dangling bonds

et al. 2011

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The oxidation of freestanding silicon nanocrystals (Si-NCs) passivated with Si-H bonds has been investigated for a wide range of oxidation times (from a few minutes to several months) by means of electron spin resonance (ESR) of dangling bonds (DBs) naturally incorporated at the interface between the NCs core and the developing oxide shell. These measurements are complemented with surface chemistry analysis from Fourier-transform infrared spectroscopy. Two surface phenomena with initiation time thresholds of 15 minutes and 30 hours are inferred from the dependence of ESR spectra on oxidation time. The first initiates before oxidation of surface Si-Si bonds and destruction of the NCs hydrogen termination takes place (induction period), and results in a decrease of the DBs density and a localization of the DBs orbital at the central Si atom. Within the Cabrera-Mott oxidation mechanism, we associate this process with the formation of intermediate interfacial configurations, resulting from surface adsorption of water and oxygen molecules. The second surface phenomenon leads to a steep increase of the defects density and correlates with the formation of surface Si-O-Si bridges, lending experimental support to theoretically proposed mechanisms for interfacial defect formation involving the emission of Si interstitials at the interface between crystalline Si and the growing oxide.

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Section: 54mentioning

confidence: 99%

Oxidation of freestanding silicon nanocrystals probed with electron spin resonance of interfacial dangling bonds

et al. 2011

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“…This we shall demonstrate, using as a framework the analysis of Lannoo [9]. This approach is a simple one which is intended to allow to emerge the intuitive understanding of a complex many-electron system.…”

Section: Introductionmentioning

confidence: 99%

Stability of electronic states of the vacancy in diamond

Mainwood

Stoneham

1997

J. Phys.: Condens. Matter

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Abstract. The vacancy in diamond is a fundamental defect which has been studied theoretically and experimentally for forty years. However, although early theories (Coulson C A and Kearsley M J 1957 Proc. R. Soc. A 241 433) were extremely successful in explaining the nature of the ground state of the neutral defect and the Jahn-Teller distortion expected Stoneham A M 1968 J. Phys. Chem. Solids 29 1987), there are still several questions which have not been answered satisfactorily. In particular, the many-electron effects and configuration interaction are vital. They determine not only the order of electronic levels in the vacancy, but also the best-known optical transition, GR1, which cannot be expressed in terms of one-electron levels alone.We bring together much of the detailed recent experimental data on the different charge states and excited states of the vacancy to build up a simple empirical model of the defect. We show that the stability of the states and their photoconductivity, or lack of it, can be reproduced. We can predict that other states of the neutral vacancy, observable by EPR, lie very close above the ground state, and another high-energy optical transition might be detectable.

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“…was used to calculate DLTS spectra S(T ) with integration times P from 1 × 10 −3 s to 5 × 10 −2 s. Accordingly, hole emission coefficients e p of deep levels at the maxima of the DLTS peaks, T max , were calculated by e p (T max ) = (0.424 35 P ) −1 and the temperature dependence of e p was analysed as [6] …”

Section: Methodsmentioning

confidence: 99%

Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study

Masuhr

Bracht

Stolwijk

et al. 1999

Semicond. Sci. Technol.

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Abstract. We present results from spreading-resistance profiling and deep level transient spectroscopy on Si after Zn diffusion at 1294 K. Concentration profiles of substitutional Zn s in dislocation-free and highly dislocated Si are described by a diffusion mechanism involving interstitial-substitutional exchange. Additional annealing at 873 K following quenching from the diffusion temperature is required in the case of dislocation-free Si to electrically activate Zn s . The formation of complexes of Zn s with unwanted impurities upon quenching is discussed. Additional Ni diffusion experiments as well as total energy calculations suggest that Ni is a likely candidate for the passivation of Zn s . From total energy calculations we find that the formation of complexes involving Zn and Ni depends on the position of the Fermi level. This explains differences in results from spreading-resistance profiling and deep level transient spectroscopy on near-intrinsic and p-type Si, respectively.

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Point Defects in Semiconductors I

Cited by 356 publications

References 0 publications

Oxidation of freestanding silicon nanocrystals probed with electron spin resonance of interfacial dangling bonds

Oxidation of freestanding silicon nanocrystals probed with electron spin resonance of interfacial dangling bonds

Stability of electronic states of the vacancy in diamond

Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study

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