Polar optical phonon scattering and negative Krömer–Esaki–Tsu differential conductivity in bulk GaN

Abstract

GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP) emission. To highlight the directional variations, we compute POP emission rates along high-symmetry directions for the zinc-blende and wurtzite crystal phases of GaN. Our treatment relies on the empirical pseudopotential energies and wave functions. The scattering rates are efficiently computed using the Lehmann-Taut Brillouin zone integration technique. For both crystal phases, we also consider the negative differential conductivity possibilities associated with the negative effective mass part of the band structure. #

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3

“…This phenomenon exists in bulk GaN, where orientation-dependent scattering rates trickle from the absence of intravalley PO phonon emission along certain directions. 49 In addition, the electrons in the TMDCs may experience random electric fields at the interface with the β-Ga 2 O 3 . 50 These are time-dependent and can be traced back to Coulomb impurities (CI) at the surface of the substrate and remote interactions with the substrate's surface optical phonons (SO), thereby slowing charge transport in the TMDCs.…”

Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

“…In principle, III-V compound crystals exhibit polar optical phonon scattering (POPS). However, the effect of POPS is less in GaAs compared to other compounds, say GaN [41]. Besides, in the present work, the low temperature μ in Al x Ga 1-x As based NSQW structures are analysed.…”