Polar state of a particle with a degenerate band spectrum in a quantum dot

Ipatova, I. P.; Maslov, A. Yu.; Proshina, O. V.

doi:10.1134/1.1187778

Cited by 10 publications

(12 citation statements)

References 5 publications

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“…The Stokes shift is commonly observed in semiconductor QDs and is a function of the QDs radius. As the diameter increases the Stokes shift decreases and disappears above a certain diameter [20]. The same dependence is observed for the QDs described here (Fig.…”

Section: Resultssupporting

confidence: 84%

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

Mordvinova¹,

Vinokurov²,

Lebedev³

et al. 2015

Beilstein J. Nanotechnol.

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SummaryZinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn atoms into the InP lattice leads to the formation of Zn acceptor levels and a luminescence tail in the red region of the spectra. Using photochemical etching with HF, we confirmed that the Zn dopant atoms are situated inside the InP nanoparticles. Moreover, doping with Zn is accompanied with the coverage of the QDs by a zinc shell. During the synthesis Zn myristate covers the QD nucleus and inhibits the particle growth. At the same time the zinc shell leads to an increase of the luminescence quantum yield through the reduction of phosphorous dangling bonds. A scenario for the growth of the colloidal InP(Zn) QDs was proposed and discussed.

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Section: Resultssupporting

confidence: 84%

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

Mordvinova¹,

Vinokurov²,

Lebedev³

et al. 2015

Beilstein J. Nanotechnol.

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“…These experimental results can be illuminated by the theory of Ipatova, Maslov, and Proshina. 30 In QD's ELOPI is given approximately by…”

Section: Resultsmentioning

confidence: 99%

Tunneling current through a quantum dot with strong electron-phonon interaction

Kuo

Chang

2002

Phys. Rev. B

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The tunneling current through a quantum dot͑QD͒ in the presence of local electron-phonon interaction ͑EPI͒ and intradot Coulomb repulsion is studied theoretically for arbitrary strength of EPI. It is found that the renormalization of the intradot Coulomb repulsion and QD level position leads to intriguing effects on the tunneling current. The interplay of Coulomb blockade and phonon-assisted tunneling processes gives rise to a rich variety of tunneling current behavior.

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“…As was shown in works [8,9], the polaron effects grow with a reduction of the QD size. The enhancement parameter is equal to the ratio between the radii of the polaron state, 0 , and a quantum dot, 0 , i.e.…”

Section: Geometric Model Of a Strained Nanoheterosystem With Quantum mentioning

confidence: 56%

“…PELESHCHAK, 2017 formations [5,6], and the Buimistrov-Pekar method [7]. In particular, in work [8], the binding energy of electron and hole polarons in spherical QDs with an infinitely deep potential well created on the basis of materials with a high ionicity was calculated, by neglecting a lattice deformation in the QD material. The influence of a deformation emerging only due to a mismatch between the QD and matrix lattice parameters on polaron effects was studied in work [9].…”

Section: Introductionmentioning

confidence: 99%

Polaron State in the Self-Consistent Electron-Deformation Field of the Quantum Dot-Matrix System

Hrushka

Peleshchak

2017

Ukr. J. Phys.

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The potential well depth for an electron in a nanoheterosystem with quantum dots has been calculated in the framework of the self-consistent electron-deformation model. It is shown that the strained InAs/GaAs nanoheterosystem with InAs spherical quantum dots is characterized by deformation fields, which appear at the quantum dot-matrix interface and result in the enhancement of polaron effects in comparison with the unstrained material. The electron polaron energy is calculated, by considering the electrostatic energy and the energy associated with the mechanical and electron-deformation strain components in the quantum-dot and matrix materials. K e y w o r d s: quantum dot, polaron, electron-deformation potential, binding energy, electron.

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Polar state of a particle with a degenerate band spectrum in a quantum dot

Cited by 10 publications

References 5 publications

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

Tunneling current through a quantum dot with strong electron-phonon interaction

Polaron State in the Self-Consistent Electron-Deformation Field of the Quantum Dot-Matrix System

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