Polarity determination in (001)-oriented A<sup>III</sup>– B<sup>v</sup>compound semiconductors by the Kossel technique and chemical etching

Nolze, Gert; Geist, V.; Wagner, G.; Paufler, P.; Jurkschat, Klaus

doi:10.1524/zkri.1990.193.1-2.111

Cited by 31 publications

(12 citation statements)

References 42 publications

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“…However, we did not notice any influence of substrate off-orientation on the phenomena presented. After growth the samples were etched in molten KOH to identify the crystallographic directions in the plane of the substrate [7]. Then, the structure of the samples was examined by high-resolution X-ray diffractometry in double and triple axis configuration.…”

Section: Methodsmentioning

confidence: 99%

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Domagała

Bąk‐Misiuk

Adamczewska

et al. 1999

phys. stat. sol. (a)

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Section: Methodsmentioning

confidence: 99%

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Domagała

Bąk‐Misiuk

Adamczewska

et al. 1999

phys. stat. sol. (a)

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“…The density of dislocations lying inclined to the interface is extremely high in such heteroepitaxial layers, and therefore, the probability is also increased to find dislocations along (112). In order to differentiate between the [110] and [liO] directions, and therefore between the (110) and (110) cross-sections the GaP crystals and InAs/(OOl)GaAs layers have been treated by chemical etching as reported by NOLZE et al 1990. Both types of specimens belong to those phases of the (B3) zinc blende structure type (space group F33m), i.e.…”

Section: Methodsmentioning

confidence: 99%

Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

Lazar

Wagner

1997

Cryst. Res. Technol.

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The displacement fields of different kinds of both perfect and dissociated dislocations have been calculated for an isotropic continuum, and by means of linear elasticity. Additionally, the corresponding HRTEM images have been simulated by the well-established EMS program package in order to predetermine the structural aspects of dislocations, and then to compare it with experimental HRTEM micrographs. The latter ones resulted from plastically deformed GaP single crystals and InAs/(OOl)GaAs single epitaxial layers. It could be established that using the simple approach of linear elasticity and isotropy results can be obtained which correspond well to the experimental images. So, the structure of various Shockley partial dislocations bounding a stacking fault can be detected unambiguously. The splitting behaviour of perfect 30" dislocations (separation into a 0" and 60" partial) and 90" dislocations (separation into two 60" partials) both with line direction along (112), 60" dislocations (separation into 3Oo/9O6 and 90"/30" configuration) and screw dislocations (separation into two 30" partials) along (110) are discussed in the more detail. Moreover, the undissociated sessile Lomer dislocation, glissile 60" dislocation and edge dislocation have been considered too.

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“…Therefore, a correct polarity assignment is of great advantage and needs a calibrated and validated intensity‐profile simulation, cf. . However, it has to be taken into account that the polarity character of a general lattice plane

(h k l)

depends on the definition of the crystal structure and the selected indices

h, k, l

.…”

Section: Quantitative Post‐processing Of Bkd Patternsmentioning

confidence: 99%

Electron backscatter diffraction beyond the mainstream

Nolze

Hielscher

Winkelmann

2016

Crystal Research and Technology

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We present special applications of electron backscatter diffraction (EBSD) which aim to overcome some of the limitations of this technique as it is currently applied in the scanning electron microscope. We stress that the raw EBSD signal carries additional information which is useful beyond the conventional orientation determination. The background signal underlying the backscattered Kikuchi diffraction (BKD) patterns reflects the chemical composition and surface topography but also contains channeling-in information which is used for qualitative real-time orientation imaging using various backscattered electron signals. A significantly improved orientation precision can be achieved when dynamically simulated pattern are matched to the experimental BKD patterns. The breaking of Friedel's rule makes it possible to obtain orientation mappings with respect to the point-group symmetries. Finally, we discuss the determination of lattice parameters from individual BKD patterns. Subgrain structure in a single quartz grain. The increased noise level in the left map reflects the lower precision of a standard orientation determination using band detection by the Hough transform. The right map results from the same experimental raw data after orientation refinement using a pattern matching approach. The colors correspond an adapted inverse pole figure color key with a maximum angular deviation of about 2 • from the mean orientation.

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Polarity determination in (001)-oriented A^III– B^vcompound semiconductors by the Kossel technique and chemical etching

Cited by 31 publications

References 42 publications

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

Electron backscatter diffraction beyond the mainstream

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Polarity determination in (001)-oriented AIII– Bvcompound semiconductors by the Kossel technique and chemical etching

Cited by 31 publications

References 42 publications

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

Electron backscatter diffraction beyond the mainstream

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Polarity determination in (001)-oriented A^III– B^vcompound semiconductors by the Kossel technique and chemical etching