Polarization dependence of carrier-induced refractive index change

Abstract

The influences of carrier density, tensile strain, well width and barrier material component on the refractive index changes of TE mode and TM mode in quantum well are analyzed. Then the quantum wells having characteristics of both large refractive index change (on the order of 10-2) and low polarization dependence (on the order of 10-4) in a wavelength range from 1530 nm to 1570 nm are designed by comprehensively integrating the parameters above. The result shows that almost the same spectra of refractive index change can be acquired by integrating different groups of parameters.