Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

Abstract

Abstract:We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 µm, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second and third harmonic signals from the substrate and surface nanostructures increase with exposure time. Opt. Photonics 7(4), 684-712 (2015). 6. R. R. Gattass and E. Mazur, "Femtosecond laser micromachining in transparent materials," Nat. Photonics 2(4), 219-225 (2008). 7. J. Bonse, S. Baudach, J. Krüger, W. Kautek, and M. Lenzner, "Femtosecond laser ablation of silicon-modification thresholds and morphology," Appl. Phys., A Mater. Sci. Process. 74(1), 19-25 (2002). 8. A. Cavalleri, K. Sokolowski-Tinten, J. Bialkowski, and D. van der Linde, "Femtosecond laser ablation of gallium arsenide investigated with time-of-flight mass spectroscopy," Appl.

Investigation into Co and Ga2O3 co-doped ZnSe chalcogenide composite semiconductor thin films fabricated using PLD

“…Many techniques have been used to prepare thin films, such as pulsed laser deposition (PLD), 32 molecular beam epitaxy (MBE), 33 and metal organic chemical vapor deposition (MOCVD). 34 The plasma transport mechanism of PLD determines that films deposited via this technology are consistent with the target components, which is especially suitable for complex components and high melting point films.…”

Preparation and characterization of Co and Ga2O3-codoped ZnS and ZnSe bulk ceramics

“…Furthermore, the effect of the different performance of the bulk and the optimization strategies should be discussed. Recently, various techniques have been used to prepare lms such as pulsed laser deposition (PLD), 20 molecular beam epitaxy (MBE), 21 and metal organic chemical vapor deposition (MOCVD). 22 In short, it is important to fabricate high quality raw materials and thin lms.…”

Femtosecond laser-induced melting and shaping of indium nanostructures on silicon wafers

“…We elaborate on the recently reported phenomenon of fs laser modification of nanostructures. 11 In addition to the experimental results, a basic analysis of heating from absorption indicates that an indium droplet is melted either by single laser pulse irradiation or by heat accumulation due to multiple pulse irradiation depending on the pulse energy. It is confirmed experimentally that HSFL plays a major role in nanostructure shaping after melting, indicating that this method of melting and shaping nanostructures is a promising tool for making metasurfaces.…”

“…The nanostructures are grown with a condensed source molecular beam epitaxy system (MBE32 Ribber) 11 on the two inch n-doped(P)-Si(111) substrate from Siltronix. The growth procedure is based on a vapor-liquid-solid (VLS) technique which is commonly used to grow nanowires.…”

“…The temperature of the substrate was measured with a thermocouple. One can grow GaAs nanowires by extending the last step of the GaAs flux time, and the use of the Si(111) substrate compared to the Si(100) substrate 11 resulted in an additional hexagonalshaped base of the intact nanostructure with a dome-shaped droplet on the top (see Fig. 1).…”