Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Li, Wenjun; Sharmin, Saima; Ilatikhameneh, Hesameddin; Rahman, Rajib; Lu, Yeqing; Wang, Jingshan; Yan, Xiaodong; Seabaugh, Alan; Klimeck, Gerhard; Jena, Debdeep; Fay, Patrick

doi:10.1109/jxcdc.2015.2426433

Cited by 81 publications

(58 citation statements)

References 20 publications

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“…Recently an alterative device design based on the concept of polarization-engineered tunnel diodes has been proposed [136], which exploits III-nitrides hetero-junctions [82]. By means of TB NEGF simulations it was shown that interband tunneling can be significantly large in GaN/InN/GaN heterojunctions, leading to an on current close to 100μA μm −1 and to a very competitive subthreshold swing.…”

Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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Section: Hetero-junction Modeling and Engineeringmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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“…InN is a type of direct and small bandgap material and InN/ In 0.75 Ga 0.25 N forms a type-I heterojunction at the interface and has the moderate band offsets at both valence and conduction bands. In addition, the density of electron states in InN is much higher than that in InAs [7]. All of these make the InN/ In 0.75 Ga 0.25 N heterostructure suitable for the realization of complementary TFET devices.…”

Section: Introductionmentioning

confidence: 99%

“…Here, the bandgap values of InN and In 0.75 Ga 0.25 N that we used were taken from Refs. [7] and [9], and band alignment at heterojunction was estimated according to the band offsets in Ref. [7].…”

Section: Introductionmentioning

confidence: 99%

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InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

Peng

Han

Wang

et al. 2016

Superlattices and Microstructures

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“…Several recent experimental [4][5][6][7] and theoretical works [8][9][10][11] have discussed that introducing a thin polarization dipole can significantly alter the physics of the p-n junction. Because III-nitride semiconductor heterostructures boast large spontaneous and piezoelectric polarization, one can tunably control the interband tunneling current by suitable design.…”

mentioning

confidence: 99%

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Yan

Islam

et al. 2015

Applied Physics Letters

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By the insertion of thin InxGa1−xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

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Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Cited by 81 publications

References 20 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

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