Polarization-entangled mid-infrared photon generation inp-doped semiconductor quantum wells

Abstract

Abstract. The optimal design of double quantum well structures for generation of polarization-entangled photons in the mid-infrared range, based on the valence intersubband transitions spontaneous parametric downconversion, is considered. The efficiency and frequency selectivity of the process are also estimated.

Mid-infrared spectrally-pure single-photon states generation from 22 nonlinear optical crystals

“…On the experimental side, PPLN [14][15][16], GaP [17], and silicon waveguide [18] have been investigated to prepare single-photon source; PPLN [19] has been studied for entangled photon source generation. On the theory side, PPLN [20], PPKN [21], PMN-0.38PT [22], etc have been investigated for single-photon source [23][24][25][26][27]; p-doped semiconductor [28] has been studied for entangled photon source. In addition, some studies explored single-photon detection by superconducting nanowire single-photon detector (SNSPD) [29][30][31] or by silicon avalanche photodiode (SAPD) in an up-conversion configuration [14,32].…”

Mid-infrared Spectrally Pure Single-Photon States Generation from 22 Nonlinear Optical Crystals

“…On the theory side, PPLN [20], periodically poled potassium niobate (PPKN) [21], 0.62Pb(Mg 1/3 Nb 2/3 )O 3 − 0.38PbTiO 3 (PMN-0.38PT) [22], etc. have been investigated for single-photon source [23][24][25][26][27]; p-doped semiconductor [28] has been studied for entangled photon source. In addition, some studies explored single-photon detection by superconducting nanowire single-photon detector (SNSPD) [29][30][31] or by silicon avalanche photodiode (SAPD) in an upconversion confguration [14,32].…”