As a room temperature multi-ferroic with coexisting anti-ferromagnetic, ferroelectric and ferroelastic orders, BiFeO 3 has been extensively studied to realize magnetoelectric devices that enable manipulation of magnetic ordering by an electric field. Moreover, BiFeO 3 is a promising candidate for ferroelectric memory devices because it has the largest remanent polarization (P r > 100 mC cm −2 ) of all ferroelectric materials. For these applications, controlling polarization switching by an electric field plays a crucial role. However, BiFeO 3 has a complex switching behaviour owing to the rhombohedral symmetry: ferroelastic (71• , 109• ) and ferroelectric (180 • ) switching. Furthermore, the polarization is switched through a multi-step process: 180• switching occurs through three sequential 71• switching steps. By using monodomain BiFeO 3 thin-film heterostructures, we correlated such multi-step switching to the macroscopically observed reliability issues of potential devices such as retention and fatigue. We overcame the retention problem (i.e. elastic back-switching of the 71 • switched area) using monodomain BiFeO 3 islands. Furthermore, we suppressed the fatigue problem of 180• switching, i.e. loss of switchable polarization with switching cycles, using a single 71• switching path. Our results provide a framework for exploring a route to reliably control multiple-order parameters coupled to ferroelastic order in other rhombohedral and lower-symmetry materials.