Polarization imaging presents advantages in capturing spatial, spectral, and polarization information from target objects across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information from imaged objects and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, we systematically elucidate the characteristics of anisotropic absorption reversal in pucker‐like group IV‐VI semiconductors MX (M = Ge, Sn; X = S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The polarization‐sensitive photodetector is constructed by utilizing MX as light‐absorbing layer, harnessing polarization‐sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors, without excessively emphasizing anisotropy photocurrent ratios, holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual‐band image band identification and image enhancement without additional auxiliary components.This article is protected by copyright. All rights reserved