Polarization in Cadmium Telluride Nuclear Radiation Detectors

Siffert, P.; Berger, JA; Scharager, C.; Cornet, A; Stuck, R.; Bell, R. O.; Serreze, H. B.; Wald, F. V.

doi:10.1109/tns.1976.4328231

Cited by 142 publications

(50 citation statements)

References 20 publications

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“…The polarization under certain operation conditions may lead to a decrease in the output count rates and charge collection efficiency which are dependent on time or incoming flux intensity. 58,59 The polarization phenomenon is due to the existence of deep trapping levels in the detector material and several models have been proposed to explain this complex effect. 58,60,61 However, with proper selection of the starting material, well-chosen surface preparation, contact deposition, and good surface passivation, these detectors can operate stably and reliably for a very long time.…”

Section: C6 Polarization and Long-term Reliabilitymentioning

confidence: 99%

Vision 20/20: Single photon counting x‐ray detectors in medical imaging

2013

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Photon counting detectors (PCDs) with energy discrimination capabilities have been developed for medical x-ray computed tomography (CT) and x-ray (XR) imaging. Using detection mechanisms that are completely different from the current energy integrating detectors and measuring the material information of the object to be imaged, these PCDs have the potential not only to improve the current CT and XR images, such as dose reduction, but also to open revolutionary novel applications such as molecular CT and XR imaging. The performance of PCDs is not flawless, however, and it seems extremely challenging to develop PCDs with close to ideal characteristics. In this paper, the authors offer our vision for the future of PCD-CT and PCD-XR with the review of the current status and the prediction of (1) detector technologies, (2) imaging technologies, (3) system technologies, and (4) potential clinical benefits with PCDs.

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Section: C6 Polarization and Long-term Reliabilitymentioning

confidence: 99%

Vision 20/20: Single photon counting x‐ray detectors in medical imaging

2013

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“…Hence CdTe and CZT are used for more than 30 years in different fields of science (e.g. astrophysics, particle detectors) [8,9], industry (e.g. material inspection) [10], security (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…medical imaging (Computed Tomography), need the capability to detect a photon flux of more than 1e9 photons/secmm 2 [14][15][16]. Such a detector has not been realised so far, because of the "polarization" effect, a reduction of the electric field strength inside the detector [8,17]. Immobile, trapped charge carriers accumulating during irradiation leading to a lower field inside the detector and recombination of charge carriers are responsible for this polarization effect [18,19].…”

Section: Introductionmentioning

confidence: 99%

CdTe/CZT under high flux irradiation

Straßburg¹,

Schroeter²,

Hackenschmied³

2011

J. Inst.

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Direct converting quantum counting detectors based on cadmium telluride and cadmium zinc telluride have been investigated with respect to their properties under intense X-ray irradiation. To derive a detailed picture of the performance of such detectors, the influence of the electric field, the detector thickness, the temperature and the intensity of the X-ray irradiation was studied. The results are discussed in terms of the "polarization" phenomenon, a reduction of the electric field strength inside the detector due to immobile charge carriers accumulating during irradiation. Furthermore, the impact of Te-inclusions and -precipitates is presented.

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“…Degradations occur more rapidly at high temperatures, at low bias voltages and for thick detectors, as widely shown in several works [10,[12][13][14][15][16][17]. Several solutions have been proposed to suppress polarization: high bias voltage operation, low temperature, low detector thickness, and switching off the bias voltage at regular time intervals.…”

Section: Introductionmentioning

confidence: 90%

“…Therefore, the high bias voltage operation and the fine segmentation of the electrodes of Al/CdTe pixel detectors make them very attractive for high-resolution spectroscopic imaging, recently proposed in astrophysics, diagnostic medicine, industrial imaging, and security screening. Time instability under bias voltage (generally termed as polarization) is the major drawback of CdTe diode detectors, as well documented in the literature [12][13][14].…”

Section: Introductionmentioning

confidence: 94%

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Turturici

Abbene

Gerardi

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tPixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4 Â 4) pixelated Schottky Al/p-CdTe/Pt detector. Current-voltage (I-V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current-voltage characteristics.

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Polarization in Cadmium Telluride Nuclear Radiation Detectors

Cited by 142 publications

References 20 publications

Vision 20/20: Single photon counting x‐ray detectors in medical imaging

Vision 20/20: Single photon counting x‐ray detectors in medical imaging

CdTe/CZT under high flux irradiation

Electrical characterization of CdTe pixel detectors with Al Schottky anode

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