2017
DOI: 10.1364/prj.6.000024
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Polarization-independent all-silicon dielectric metasurfaces in the terahertz regime

Abstract: Y, et al. (2017) Polarizationindependent all-silicon dielectric metasurfaces in the terahertz regime. Photonics Research 6: 24.

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Cited by 86 publications
(46 citation statements)
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“…Subwavelength structures composed of dielectric materials have been engineered for device‐specific applications at the terahertz regime. On one hand, low‐loss dielectric materials with moderate‐to‐high relative permittivity have been engineered into metasurfaces as phasing elements with nonuniform dimensions for wavefront manipulation and dynamic beam control for antennas and lenses or with anisotropic properties for polarization manipulation . On the other hand, lossy dielectric materials with moderately high relative permittivity are engineered to enhance coupling between and field confinement within subwavelength resonant cavity bodies.…”
Section: Dielectric Materials As Resonant Elements and Structuresmentioning
confidence: 99%
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“…Subwavelength structures composed of dielectric materials have been engineered for device‐specific applications at the terahertz regime. On one hand, low‐loss dielectric materials with moderate‐to‐high relative permittivity have been engineered into metasurfaces as phasing elements with nonuniform dimensions for wavefront manipulation and dynamic beam control for antennas and lenses or with anisotropic properties for polarization manipulation . On the other hand, lossy dielectric materials with moderately high relative permittivity are engineered to enhance coupling between and field confinement within subwavelength resonant cavity bodies.…”
Section: Dielectric Materials As Resonant Elements and Structuresmentioning
confidence: 99%
“…High‐resistivity, single‐crystal float‐zone silicon (HR Si) is the most widely employed low loss dielectric material as resonators for free‐space devices. This is due to its low loss, moderate‐to‐high dielectric constant, stable properties across a range of wavelengths, ease of etching unit structures using deep reactive ion etching (DRIE) processes, and ease of handling. Intrinsic Si has a purity level dependent loss tangent tan δ < 4 × 10 −5 and moderate relative permittivity (ε r ) of 11.68 at 1 THz.…”
Section: Lossless Dielectric Materialsmentioning
confidence: 99%
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