Polarization insensitive 1.55-μm optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells

Seiferth, F.; Johnson, F.G.; Merritt, Scott A.; Fox, S.; Whaley, R.D.; Chen, Y.J.; Dagenais, M.; Stone, D.R.

doi:10.1109/68.623256

Cited by 15 publications

(6 citation statements)

References 10 publications

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“…InGaAsP/InGaAs QWs with a strained δ layer of GaAs in the middle of the well have been studied in [74]. Such structures are used in semiconductor optical amplifiers (SOA) to achieve light polarization insensitivity by inducing energy degeneracy of light-hole and heavy-hole levels [14]. In this calculation Figure 6 shows the valence band dispersion for the GaAs δ-strain structure.…”

Section: Quantum Wells and Superlatticesmentioning

confidence: 99%

“…Modern applications, however, push nanostructures to dimensions and geometries where the EFA may not be as accurate as necessary [11]. For example, this is the case of quantum dots [12,13], strained delta-layers [14] or nanometre-scale silicon metal-oxide semiconductor fieldeffect transistors (MOSFETs) [15][16][17]. In the latter case, oxide dimension, channel thickness and channel length are such that the application of the EFA is highly questionable [18].…”

Section: Introductionmentioning

confidence: 99%

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Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

116

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Effects of hydrostatic pressure on the electron gparallel factor and g-factor anisotropy inGaAs-(Ga, Al)As quantum wells under magnetic fields N Porras-Montenegro, C A Duque, E Reyes-Gómez et al. Electron g-factor study in {\rm Ga}_{1-x}In_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} and {\rm GaSb}\hbox{--}{\rm Ga}_{1-x}{\rm In}_{x}{\rm As}_{y}{\rm Sb}_{1-y}\hbox{--}{\rm GaSb} quaternary alloy semiconductor SQDSQDs (SQDs) R Sánchez-Cano and N Porras-Montenegro Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields F E López, E Reyes-Gómez, H S Brandi et al. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells Pawel Pfeffer and Wlodek Zawadzki Magnetic field effect on electron spin dynamics in (110) GaAs quantum wells G Wang, A Balocchi, A V Poshakinskiy et al. AbstractThe electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the´k p 8 8 · Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * g and *

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Section: Quantum Wells and Superlatticesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Carlo

2002

Semicond. Sci. Technol.

116

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“…Nanoscale dimensions are common not only to Si MOSFETs, but also to other electronic devices such as, Si tunnelling devices (Thompson et al 1999) and Esaki double-barrier tunnelling structures, known as resonant tunnelling diodes (RTDs), where the active region can be as small as 20 nm. Similarly, multilayered structures for modern optoelectronic devices such as quantum-cascade lasers (QCLs), quantum-dots (Ledentsov et al 2000, Yoffe 2001) and strained delta-layers (Seiferth et al 1997) are all characterized by nanometric dimensions.…”

Section: Introductionmentioning

confidence: 99%

Atomistic theory of transport in organic and inorganic nanostructures

2004

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As the size of modern electronic and optoelectronic devices is scaling down at a steady pace, atomistic simulations become necessary for an accurate modelling of their structural, electronic, optical and transport properties. Such microscopic approaches are important in order to account correctly for quantum-mechanical phenomena affecting both electronic and transport properties of nanodevices. Effective bulk parameters cannot be used for the description of the electronic states since interfacial properties play a crucial role and semiclassical methods for transport calculations are not suitable at the typical scales where the device behaviour is characterized by coherent tunnelling.Quantum-mechanical computations with atomic resolution can be achieved using localized basis sets for the description of the system Hamiltonian. Such methods have been extensively used to predict optical and electronic properties of molecules and mesoscopic systems.The most important approaches formulated in terms of localized basis sets, from empirical tight-binding (TB) to first principles methods, are here reviewed. Being a full band approach, even the simplest TB overcomes the limitations of envelope function approximations, such as the well-known k • p, and allows to retain atomic details and realistic band structures. First principles calculations, on the other hand, can give a very accurate description of the electronic and structural properties.Transport in nanoscale devices cannot neglect quantum effects such as coherent tunnelling. In this context, localized basis sets are well-suited for the formal treatment of quantum transport since they provide a simple mathematical framework to treat open-boundary conditions, typically encountered when the system eigenstates carry a steady-state current.We review the principal methods used to formulate quantum transport based on local orbital sets via transfer matrix and Green's function (GF) techniques. We start from a general introduction to the scattering theory which leads to the Landauer formula, and then report on the most recent progresses of the field including the application of the self-consistent non-equilibrium GF formalism.

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“…Moreover, the difference between the TE and TM confinement factor enhances the polarization sensitivity of the gain. In order to achieve the desired polarization insensitivity, several SOA structures with strain between the different layers have been proposed [9][10][11]. The essential feature of the strain is to shift HH and LH bands independently.…”

Section: A Tight-binding Description Of Electronic and Optical Propermentioning

confidence: 99%

“…We investigate the differences in optical matrix elements and gain coefficient between the reference structure and one where 3 monolayers (ML) of InGaAs in the middle of the well are replaced by strained GaAs. The latter system has been shown to guarantee a good degree of polarization insensitivity [11].…”

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confidence: 99%

Simulation of Optoelectronic Devices

Lugli¹,

Compagnone

Carlo

et al. 2001

VLSI Design

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In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight-binding analysis is performed aimed at the optimization of the polarization independence of the device. Further, a rate-equation model is set up to describe the dynamics of gain recovery after optical pumping. A Monte Carlo simulation of a superlattice quantum cascade laser is then presented which provides an insight into the microscopic processes controlling the performance of this device.

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Polarization insensitive 1.55-μm optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells

Cited by 15 publications

References 10 publications

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Microscopic theory of nanostructured semiconductor devices: beyond the envelope-function approximation

Atomistic theory of transport in organic and inorganic nanostructures

Simulation of Optoelectronic Devices

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