2003
DOI: 10.1063/1.1536019
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Polarization recovery of fatigued Pb(Zr,Ti)O3 thin films: Switching current studies

Abstract: In the process of fatiguing Ir/Pb(Zr0.35Ti0.65)O3/Pt capacitors we have observed the splitting and separation of both the positive and negative switching currents into two distinct peaks. By measuring the current response to a post-fatigue, triangular, voltage waveform, we have observed a shift of the majority of the switching current to higher voltages and, eventually, beyond the voltage testing range. At high fatigue cycle numbers, this current peak shift is large enough to reveal a smaller switching current… Show more

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Cited by 16 publications
(11 citation statements)
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“…Similar kind of polarization recovery by applying higher electric field has been reported previously for PZT films deposited on Pt electrodes, although no physical description for the occurrence is included. 34 The observed fatigue phenomenon and its recovery can be explained using Dawber-Scott model and kinetic approach of the fatigue. According to Dawber-Scott model the charged defects such as oxygen vacancies accumulate easily near film-electrode interfaces and results in the formation of space-charge layers under the influence of an external field.…”
Section: Resultsmentioning
confidence: 99%
“…Similar kind of polarization recovery by applying higher electric field has been reported previously for PZT films deposited on Pt electrodes, although no physical description for the occurrence is included. 34 The observed fatigue phenomenon and its recovery can be explained using Dawber-Scott model and kinetic approach of the fatigue. According to Dawber-Scott model the charged defects such as oxygen vacancies accumulate easily near film-electrode interfaces and results in the formation of space-charge layers under the influence of an external field.…”
Section: Resultsmentioning
confidence: 99%
“…Instead of measuring the integrated charge directly ͑Sawyer-Tower or virtual ground circuit͒, we record the switching current by monitoring the potential drop across a tunable reference resistor placed in series to the ferroelectric capacitor ͑shunt method, 44 Fig. 4͒ with an oscilloscope.…”
Section: A Characterization Methodsmentioning
confidence: 99%
“…These materials are exemplified by thin ferro electric films, which exhibit a high field controlled permittivity, a significant frequency dispersion of the properties, and a high dielectric nonlinearity [1][2][3]. The successful implementation and exploitation of ferroelectric memory cells necessitate a detailed inves tigation of the polarization switching processes and peculiarities of formation and kinetics of the domain structure in thin polycrystalline films, including the aging and fatigue processes, which exhibit themselves in deterioration of the properties with time and a decrease in the switchable charge after multiply repeated switching (fatigue) [4][5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%