2013
DOI: 10.1103/physrevlett.111.127602
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Polarization Sensitive Surface Band Structure of DopedBaTiO3(001)

Abstract: We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTiO(3)(001) single crystal. The n-type doping of the BaTiO(3) is controlled by in situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemission threshold, core level and valence band spectra show contrast due to domain polarization. Reciprocal space ima… Show more

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Cited by 20 publications
(19 citation statements)
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“…The ratio between Ti 4+ atoms and the reduced Ti 3+ species is a measure of the n-type doping in the BTO layer. It was shown recently that ferroelectricity survives to charge doping up to concentrations as high as 1.3-1.9 × 10 21 e/cm 3 , corresponding to approximately 0.09-0.11 e/unit cell [60,61]. For values higher than this threshold, the free charges quench the ferroelectricity.…”
Section: B X-ray Photoelectron Spectroscopymentioning
confidence: 98%
“…The ratio between Ti 4+ atoms and the reduced Ti 3+ species is a measure of the n-type doping in the BTO layer. It was shown recently that ferroelectricity survives to charge doping up to concentrations as high as 1.3-1.9 × 10 21 e/cm 3 , corresponding to approximately 0.09-0.11 e/unit cell [60,61]. For values higher than this threshold, the free charges quench the ferroelectricity.…”
Section: B X-ray Photoelectron Spectroscopymentioning
confidence: 98%
“…Surface metallization, when observed experimentally, is thus very probably the consequence of the presence of point defects such as oxygen vacancies [29]. Theoretical predictions of metallization of the surface of BTO [8] are more probably due to the use of fixed atomic positions in the bulk creating an unscreened depolarizing field which in turn can induce a surface density of states at the Fermi level.…”
Section: Electronic Density Of Statesmentioning
confidence: 99%
“…Close to the Fermi energy an in-gap state is located at a binding energy of 0.8 eV in the bulk band gap [46]. Under irradiation, the spectral intensity of this in-gap state and of the Ti 3 + shoulder of the Ti 3p core level is increasing with time as shown in Figs.…”
Section: Photoemission Resultsmentioning
confidence: 80%