Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

Liang, J. S.; Wang, S. D.; Huang, Ying; Tien, C. W.; Chang, Yu‐Ming; Chen, C. W.; Li, N. Y.; Lin, Der-Yuh; Pollak, Fred H.

doi:10.1063/1.1445463

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…This is particularly valuable in strained layer structures, where the lh-hh separation and ordering is dependent upon strain. Photovoltage spectroscopy (PVS) where the light is incident on the edge of the structure (E-PVS) [1][2][3] provides a means to measure the response for light polarized parallel and perpendicular to the plane of the well (termed TE and TM polarizations, respectively) and has been used to determine the strain from the magnitude lh-hh energy separation [1]. Whilst this technique enables lh and hh transitions to be distinguished, the magnitude of the photovoltage signal does not provide a direct measurement of the relative magnitude of the strength of the TE and TM interactions due to a number of other polarizationdependent elements in the experiment.…”

Section: Introductionmentioning

confidence: 99%

Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Mexis

Blood

Smowton

2007

Semicond. Sci. Technol.

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We propose a method to obtain the ratio of the fundamental TE/TM optical response of a quantum-confined system from the measurement of the polarization dependence of the edge photovoltage spectrum by correcting for polarization-dependent features of the experimental system. When applied to compressive-and tensile-strained InGaP quantum well structures, the results are in excellent agreement with known ratios of the band-edge matrix elements. The method will be of a particular value in the study of quantum dot systems.

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Section: Introductionmentioning

confidence: 99%

Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Mexis

Blood

Smowton

2007

Semicond. Sci. Technol.

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Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Huang

Pollak

2005

Physica Status Solidi (a)

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We review the use of the contactless methods of photoreflectance (PR), contactless electroreflectance (CER) and wavelength modulated differential surface photovoltage spectroscopy (DSPS) for the nondestructive, room temperature characterization of a wide variety of wafer-scale III -V semiconductor device structures. Some systems that will be discussed include heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions, alloy composition, and dc current gain factor), pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistors (including the determination of the composition, width, and two-dimensional electron gas density in the channel), InGaAsP/InP quantum well edge emitting lasers (including the detection of p-dopant interdiffusion), vertical-cavity surface-emitting lasers (determination of fundamental conduction to heavy-hole excitonic transition and cavity mode).

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Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure

Wang

Liang

Huang

et al. 2002

Journal of Applied Physics

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Articles you may be interested inDifferential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surfaceemitting laser structure An angle-dependent wavelength-modulated differential-photovoltage spectroscopy ͑DPVS͒ investigation has been performed at room temperature on a bare as-grown wafer of GaAs/ GaAlAs-based vertical-cavity surface-emitting laser ͑VCSEL͒ structure, designed for emitting at a wavelength near 850 nm. The differential-photovoltage ͑DPV͒ spectra exhibit both the fundamental conduction to heavy-hole excitonic transition and cavity mode plus an interference pattern related to the mirror stacks. By changing the angle of incidence in the DPV measurements the energy positions of the cavity mode and distributed Bragg reflector features show a blueshift while the excitonic transition remains unchanged. The energies of the excitonic transition and cavity mode are accurately determined from the DPV spectra. The advantages of DPVS in relation to other methods of characterizing VCSEL structures, such as surface photovoltage, photoreflectance, photocurrent, and differential photocurrent spectroscopy, are discussed. The results demonstrate considerable potential of DPVS for the nondestructive characterization of these structures at room temperature.

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Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

Cited by 5 publications

References 14 publications

Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Polarization response of quantum-confined structures using edge-photovoltage spectroscopy

Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy

Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure

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