2022
DOI: 10.1002/ente.202100956
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Poly(N,N′‐bis‐4‐butylphenyl‐N,N′‐biphenyl)benzidine as Interfacial Passivator for Dopant‐Free P3HT Hole Transport Layer‐Based Perovskite Solar Cell in Regular Mesoscopic Architecture

Abstract: The best‐recorded performance of perovskite‐based solar cells (PSCs) in regular mesoscopic architecture is generally associated with the use of the common 2,2′,7,7′‐tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9′‐spirobifluorene (Spiro‐OMeTAD). However, the need for lithium‐based hygroscopic dopants hinders the chemical and environmental stability of the devices. This work presents a passivated stable PSC device based on a dopant‐free poly(3‐hexylthiophene) (P3HT) hole transport layer. By introducing a poly(N,N′‐b… Show more

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Cited by 3 publications
(4 citation statements)
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“…[31] Additionally, P3HT has strong resistance to mechanical stress and was applied in flexible PSC applications. [66,73] The highest occupied molecular orbital energy level (E HOMO ) of P3HT is near À5.2 eV, [8] which is greater than that of perovskite materials (methylammonium lead iodide and mixed perovskite have an E HOMO of À5.4 and À5.6 eV, respectively). [74,75] It is important to note that P3HT has a relatively higher hole mobility (up to 0.1 cm 2 V À1 s À1 depending on its π-stacking and chain organization), [31,39,40,52,62,63] compared to pristine Spiro-OMeTAD (≈10 À4 cm 2 V À1 s À1 according to space charge limited current [SCLC] calculations).…”
Section: P3ht As a Htmmentioning
confidence: 99%
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“…[31] Additionally, P3HT has strong resistance to mechanical stress and was applied in flexible PSC applications. [66,73] The highest occupied molecular orbital energy level (E HOMO ) of P3HT is near À5.2 eV, [8] which is greater than that of perovskite materials (methylammonium lead iodide and mixed perovskite have an E HOMO of À5.4 and À5.6 eV, respectively). [74,75] It is important to note that P3HT has a relatively higher hole mobility (up to 0.1 cm 2 V À1 s À1 depending on its π-stacking and chain organization), [31,39,40,52,62,63] compared to pristine Spiro-OMeTAD (≈10 À4 cm 2 V À1 s À1 according to space charge limited current [SCLC] calculations).…”
Section: P3ht As a Htmmentioning
confidence: 99%
“…[8,115,[122][123][124][125] Organic compounds such as PolyTPD, P3CT-BN, and BTCIC-4Cl were inserted as buffer layers at the perovskite/P3HT interface. [8,115,123] These inserted layers were able to coordinate with the uncoordinated Pb 2þ atoms at the perovskite surface, which increased hole extraction and decreased interfacial trap states and charge-carrier recombination, with the highest recorded performance attributed to P3CT-BN-based devices, achieving a 19.23% PCE while retaining 80% of its initial PCE under 40% relative humidity for 1800 h. [115] Another combination was reported based on P3HT NPs and trioctylphosphine oxide (TOPO) interlayer for carbon electrodebased PSCs. The introduced combination preserved a significantly improved performance of 18.4% PCE with thermal stability under thermal stress for 1000 h, while with Au electrode recorded a high 19.8% PCE.…”
Section: Other Passivating Materialsmentioning
confidence: 99%
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“…However, its LUMO level is higher (∼ 3.0 eV) than that of spiro-OMeTAD (∼ 1.7 eV), leading to a larger charge carrier recombination at the perovskite/P3HT interface and consequently making it less effective as an electron blocker. To reduce such recombination, several interfacial modification strategies have been reported (Jung et al, 2019;Zhang et al, 2020;Jeong et al, 2021;Peng et al, 2022;Guo et al, 2021;Gu et al, 2022;Kassem et al, 2022;Ghoreishi et al, 2022;Li et al, 2022). The most successful one has been the introduction of a thin layer of wide-bandgap halide perovskite on the perovskite surface (Jung et al, 2019), together with the addition of gallium (III) acetylacetonate in P3HT, leading to very efficient (∼ 24%) and stable PSCs (Jeong et al, 2021).…”
Section: Introductionmentioning
confidence: 99%