Poly(vinyl alcohol) gate dielectric surface treatment with vitamin C for poly(3-hexylthiophene-2,5-diyl) based field effect transistors performance improvement

Col, Cristiane de; Nawaz, Ali; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

doi:10.1016/j.orgel.2014.11.015

Cited by 27 publications

(16 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 4(b) shows that the capacitance per unit area of all ITO/ PMMA/Al devices decreased when the signal frequency was increased from 100 to 10 6 Hz. This capacitance reduction with increasing frequency was mainly attributed to a reduction in the dielectric constant of PMMA, 20 which resulted from dipoles failing to reorient with the electric eld in the high-frequency range.…”

Section: Electrical Properties Of Polymer Dielectric Lmsmentioning

confidence: 99%

“…[1][2][3][4] The compatibility of polymers selected as active and dielectric layers is crucial for device performance, particularly regarding solvent corrosion in solution processing, wherein the solvent for the top polymer roughens the interface or damages the lower layer during deposition. 5,6 In general, to produce a polymer bilayer with a high-quality interface, a suitable solvent, in which the top polymer is highly soluble, but the underlying polymer is insoluble, must be selected to prevent damage.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the density of the interface traps in the FET device was derived to be 2.3 Â 10 11 cm À2 using eqn (6), which is in the value range of 10 11 to 10 12 cm À2 for the PMMA/P3HT…”

mentioning

confidence: 99%

See 2 more Smart Citations

Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method

Zhang

Lou

et al. 2018

RSC Adv.

View full text Add to dashboard Cite

The properties of semiconductor/dielectric interfaces are crucial to the performance of polymer fieldeffect transistors. The key to fabricating high-performance polymer transistors by spin-coating is solving solvent corrosion issues, wherein the solvent of the top polymer produces a rough interface or damage on the underlying polymer layer during deposition. Herein, we propose a mixed-solvent method that employs a mixture of an orthogonal solvent of the underlying polymer and a good solvent of the top polymer as the solvent of the top polymer to prepare polymer bilayers and produce a comparative study of the trap density at the semiconductor/dielectric interface of the corresponding transistor. By changing the ratio of orthogonal solvent to good solvent, namely the degree of orthogonality of the mixed solvent with respect to the underlying polymer, the interface and film qualities of polymer bilayers can be well controlled. We applied this method to spin-coat poly(3-hexylthiophene) (P3HT) on poly(methylmethacrylate) (PMMA) with a mixture of cyclohexane (orthogonal solvent) and chloroform (good solvent). The results of morphology characterizations and electrical property studies indicate the optimal ratio of cyclohexane to chloroform for preparing high-quality P3HT/PMMA bilayers for fieldeffect conduction is 7 : 3. Transistors based on the optimal bilayers with a bottom-gate/top-contact configuration and a long channel length show good performance. The trap density at the P3HT/PMMA interface is evaluated to be 3.6 Â 10 12 cm À2 eV À1 from the subthreshold swing, characterizing the distribution of the interface trap levels across the bandgap in P3HT. Furthermore, based on deviations from ideality in the capacitance-voltage characteristics of the metal-insulator-semiconductor capacitor in the device, the traps at the interface are found to be acceptor-type, with the trap density determined to be 2.3 Â 10 11 cm À2. This value is in a good agreement with that estimated from the subthreshold swing.

show abstract

Section: Electrical Properties Of Polymer Dielectric Lmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method

Zhang

Lou

et al. 2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…In this context, passivation/ neutralization of such traps is necessary to ameliorate device performance. Treatments have recently successfully solved this problem in devices based on p-type channel semiconductors, poly(3-hexylthiophene-2,5-diyl) [17][18][19] and copper phthalocyanine. 20,21 As transistor size gets smaller, many undesirable effects come into play and nanometrically small defects and traps play a significant role, impairing device performance.…”

Section: Introductionmentioning

confidence: 99%

Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors

2016

Self Cite

View full text Add to dashboard Cite

We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C 60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (μ FET ) of 0.18 cm 2 V -1 s -1 . Treatment of the gate dielectric surface with an anionic surfactant, sodium dodecyl sulfate (SDS), passivates the positively charged defects present on the surface of cr-PVA, hence resulting in overall transistor performance improvement with an increase in μ FET to 1.05 cm 2 V -1 s -1 and additional significant improvements in dielectric capacitance, transistor on/off current ratio and transconductance.

show abstract

“…The highly ordering P3HT film leads to large hole mobility as compared with other polymers. De Col. et al have fabricated P3HT-based FET by treating the dielectric layer with vitamin C, showing the highest reported mobility of 0.4 cm 2 /V·s [3]. Therefore, P3HT is the favorite material in polymer-based field-effect transistor (FET) and several works on P3HT-based photoresponsive organic fieldeffect transistor (photOFET) have been presented [4]- [6].…”

mentioning

confidence: 99%

Performance Enhancement of FET-Based Photodetector by Blending P3HT With PMMA

Zhang

Yang

Wang

et al. 2015

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

In this letter, we presented a solution-processed photodetector with a configuration of field-effect transistor (FET) ITO/poly(4-vinylphenol) (PVP)/poly(3-hexylthiophene) (P3HT): poly(methyl methacrylate) (PMMA)/Au in which PVP acts as a dielectric layer and different PMMA content (20 wt.% ∼ 60 wt.%) in P3HT as active layer. The best electrical property of the photodetector under no illumination was obtained with 20 wt.% PMMA content and the maximum ON-OFF current ratio and hole mobility of the as-prepared devices are 329 and 1.6 × 10 −3 cm 2 /V · s, respectively. Under illumination with wavelengths varying from 350 to 650 nm, however, the 50 wt.% PMMA content device demonstrated highest performance, showing a maximum photoresponsivity of 166.45 mA/W under 65 µW/cm 2 of 600-nm illumination. Atom force microscope (AFM) phase images of P3HT:PMMA film certify the phase separation between P3HT and PMMA, as well as the crystallinity improvement of P3HT film after blending PMMA. The performance of FET-based photodetector under illumination is discussed. Index Terms-Semiconductor-insulator blends, phase separation, photodetector, poly(3-hexylthiophene) (P3HT), poly(methyl methacrylate) (PMMA).

show abstract

Poly(vinyl alcohol) gate dielectric surface treatment with vitamin C for poly(3-hexylthiophene-2,5-diyl) based field effect transistors performance improvement

Cited by 27 publications

References 25 publications

Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method

Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method

Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors

Performance Enhancement of FET-Based Photodetector by Blending P3HT With PMMA

Contact Info

Product

Resources

About