Polycrystalline diamond formation by post-growth ion bombardment of sputter-deposited amorphous carbon films

Patsalas, P.; Logothetidis, S.; Douka, P; Gioti, M.; Stergioudis, G.; Komninou, Ph.; Nouet, G.; Karakostas, Th.

doi:10.1016/s0008-6223(98)00287-5

Cited by 15 publications

(33 citation statements)

References 20 publications

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“…This is in agreement with high-resolution electron microscopy and x-ray diffraction results, 27 showing the presence of SiC ͑-2H and -4H type͒ clusters of diameter about 4 nm at the initial stages ͑1-3 nm thick͒ of the a-C film growth. The formation of the SiC has been explained by the interdiffusion of C and Si atoms across the a-C/Si interface during the initial stages of growth ͑nucleation stage up to about 3 nm͒ forming SiC-like geometry.…”

Section: A Xrr Measurementssupporting

confidence: 91%

Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions

Hastas

Dimitriadis

Patsalas

et al. 2001

Journal of Applied Physics

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Effect of the layered structure on the electronic properties of amorphous carbon films on n-SiThe structural, electrical, and low-frequency-noise properties of heterojunctions of amorphous-carbon (a-C) films grown on either n-or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias V b , from ϩ10 to Ϫ200 V. The study includes measurements of x-ray reflectivity ͑XRR͒, low-frequency noise at room temperature, and dark current-voltage (I -V) and capacitance-voltage (C -V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for V b ϭϪ200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I -V and C -V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states.

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Section: A Xrr Measurementssupporting

confidence: 91%

Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions

Hastas

Dimitriadis

Patsalas

et al. 2001

Journal of Applied Physics

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“…This monolayer-scale contamination, when present, Fig. 1 Early SW 24 Mg analyses from DLC relative to silicon (horizontal line). Original analyses (diamonds) were scattered.…”

Section: Sources and Examples Of Observed Matrix Effects In Dlcmentioning

confidence: 99%

“…Our rst SIMS analyses of SW 24 Mg in DLC treated the collector as a homogeneous material and, in addition, used implants of minor ions ( 25 Mg, 26 Mg) for calibration. This method was exactly the same as that used for silicon.…”

Section: Issues Encountered Analysing Dlc By Simsmentioning

confidence: 99%

Quantifying low fluence ion implants in diamond-like carbon film by secondary ion mass spectrometry by understanding matrix effects

Jurewicz

Olinger

Burnett

et al. 2021

J. Anal. At. Spectrom.

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“…12b) (112) planes, respectively. [38][39][40] Fig. 12c shows the TEM image of white color marked region in Fig.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Synergistic improving of tribological properties of amorphous carbon film enhanced by F–Si-doped multilayer structure under corrosive environment

Zhang

Wang

2015

Surface and Coatings Technology

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Polycrystalline diamond formation by post-growth ion bombardment of sputter-deposited amorphous carbon films

Cited by 15 publications

References 20 publications

Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions

Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions

Quantifying low fluence ion implants in diamond-like carbon film by secondary ion mass spectrometry by understanding matrix effects

Synergistic improving of tribological properties of amorphous carbon film enhanced by F–Si-doped multilayer structure under corrosive environment

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