Polycrystalline GaN for light emitter and field electron emitter applications

Hasegawa, Shigehiko; Nishida, Shuzo; Yamashita, Takumi; Asahi, H.

doi:10.1016/j.tsf.2005.01.076

Cited by 40 publications

(33 citation statements)

References 26 publications

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“…[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Polycrystalline, 19 nanocrystalline, 20 and amorphous 37 GaN have also shown good luminescence characteristics. Applications of polycrystalline GaN films have been demonstrated in LEDs, 38,39 white lighting, 39 UV photodetectors, 40 solar cells, 41,42 thin film transistors, 43,44 and field electron emitters, 16,45 and suitability of GaN films for application in large area flat panel displays has also been explored. 46 The potential of GaN films for these applications has thus driven the search for low cost and low temperature deposition processes on low cost substrates.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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Properties of InxGa1−xN films in terahertz range Appl. Phys. Lett. 100, 071913 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems Appl. Phys. Lett. 100, 051110 (2012) High-Q optomechanical GaAs nanomembranes Appl. Phys. Lett. 99, 243102 (2011) Mg-induced terahertz transparency of indium nitride films Appl. Phys. Lett. 99, 232117 (2011) Additional information on J. Appl. Phys. GaN films have been deposited by reactive rf sputtering of GaAs target in 100% nitrogen ambient on quartz substrates at different substrate temperatures ranging from room temperature to 700°C. A series of films, from arsenic-rich amorphous to nearly arsenic-free polycrystalline hexagonal GaN, has been obtained. The films have been characterized by phase modulated spectroscopic ellipsometry to obtain the optical parameters, viz., fundamental band gap, refractive index, and extinction coefficient, and to understand their dependence on composition and microstructure. A generalized optical dispersion model has been used to carry out the ellipsometric analysis for amorphous and polycrystalline GaN films and the variation of the optical parameters of the films has been studied as a function of substrate temperature. The refractive index values of polycrystalline films with preferred orientation of crystallites are slightly higher ͑2.2͒ compared to those for amorphous and randomly oriented films. The dominantly amorphous GaN film shows a band gap of 3.47 eV, which decreases to 3.37 eV for the strongly c-axis oriented polycrystalline film due to the reduction in amorphous phase content with increase in substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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“…However, owing to its versatile properties and enormous application potential, there has been a growing interest in polycrystalline GaN films deposited by various versions of MBE [8][9][10][11][12] and MOCVD [13][14][15][16][17] and sputtering [18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Light emitting diodes [32][33] and field electron emitters [14,34] based on polycrystalline GaN films have been demonstrated. Potential applications of polycrystalline GaN in thin film transistors, white lighting and electroluminescent devices for flat panel displays, photovoltaics and photonic devices have driven the search for alternative low cost deposition processes and substrates.…”

Section: Introductionmentioning

confidence: 99%

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

et al. 2008

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“…[1][2][3] Further, its low electron affinity and the ability of high n-type doping make it a promising material for field emitters. 9,10 Device quality GaN films are usually grown epitaxially, using metal organic chemical vapor deposition ͑MOCVD͒ or molecular beam epitaxy ͑MBE͒ techniques.…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12] In view of the wide ranging, potential applications of polycrystalline GaN, sputtering technique has recently become attractive, owing to its versatility and scalability. There have been several early reports on the growth of GaN films by reactive sputtering of Ga target with nitrogen or nitrogen-argon mixture, [13][14][15] though problems of reproducibility arising out of the low melting temperature of gallium have been reported.…”

Section: Introductionmentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

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GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300°C are amorphous and As rich. Above 300°C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700°C, GaN films, practically free of amorphous phase, and As (<0.5at.%) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500°C, the surface diffusion between planes dominates and results in the (101¯1) preferred orientation. Above 500°C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

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Polycrystalline GaN for light emitter and field electron emitter applications

Cited by 40 publications

References 26 publications

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target

Growth and structure of sputtered gallium nitride films

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