2004
DOI: 10.1002/pssc.200304245
|View full text |Cite
|
Sign up to set email alerts
|

Polycrystalline n ‐ZnO/ p ‐Cu 2 O heterojunctions grown by RF‐magnetron sputtering

Abstract: PACS 73.61. Ga, 81.15.Cd, 84.60.Jt Polycrystalline n-ZnO/p-Cu 2 O heterojunctions were fabricated by reactive sputtering for photovoltaic applications. Although electrical rectification was not reproducibly obtained in the as-grown samples, rectification was observed in the samples fabricated with cyanide treated Cu 2 O. We have previously shown that cyanide treatment has an effective role in passivation of defects in Cu 2 O, in analogy to hydrogen passivation. It is, therefore, believed that the observed i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
38
0

Year Published

2006
2006
2015
2015

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 66 publications
(38 citation statements)
references
References 9 publications
0
38
0
Order By: Relevance
“…The approach taken in this paper anticipates the use of n-ZnO as the heterojunction partner for p-Cu 2 O in photovoltaic devices. There have been many reports on Cu 2 O solar cells prepared by various techniques, including electrodeposition [3], thermal oxidation of copper sheets [7], and sputter deposition [8]. However, the energy conversion efficiencies of these cells were only a fraction of their respective Shockley-Queisser theoretical values.…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation
“…The approach taken in this paper anticipates the use of n-ZnO as the heterojunction partner for p-Cu 2 O in photovoltaic devices. There have been many reports on Cu 2 O solar cells prepared by various techniques, including electrodeposition [3], thermal oxidation of copper sheets [7], and sputter deposition [8]. However, the energy conversion efficiencies of these cells were only a fraction of their respective Shockley-Queisser theoretical values.…”
Section: Introductionmentioning
confidence: 98%
“…It has been reported to have a long minority carrier diffusion length ( $ 5 mm) [2], and is also composed of both earth-abundant and inexpensive elements [3]. Cuprous oxide is typically a p-type semiconductor due to intrinsic doping by copper vacancies, and efforts to form high-quality homojunctions by n-doping of Cu 2 O have largely been unsuccessful.…”
Section: Introductionmentioning
confidence: 99%
“…The oxides of copper such as cuprous oxide (Cu 2 O) and cupric oxide (CuO) are the two stable forms of semiconducting oxides having different crystal structures and physical properties [8,9]. The Cu 2 O has been widely studied as an absorber for low-cost solar cells [10][11][12][13][14], but its high optical band gap (2.1 eV) is not optimum to obtain high conversion efficiency in single-junction solar cells [15], whereas the CuO possesses a direct band gap of *1.3 eV, which is ideal for an absorber material to be used in solar cell applications [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Among several Cu 2 O formation methods, such as thermal oxidation [6 -12], electrodeposition [13][14][15][16][17][18][19][20][21] and sputtering deposition [22][23][24][25][26][27], the highest conversion efficiency was obtained by the thermal oxidization method. Since the thermal oxidation progresses under a thermal equilibrium state of the Cu 2 O phase [28], it seems to be an ideal formation method.…”
Section: Introductionmentioning
confidence: 99%