Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Cifré, J.; Bertomeu, J.; Puigdollers, J.; Polo, M.C.; Andreu, J.; Lloret, A.

doi:10.1007/bf00331926

“…The structure of the present films has been studied in a previous paper [3] by X-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The films presented a columnar crystalline structure with 0.3-1 m crystallite sizes and preferential orientation in direction [220].…”

Section: Resultsmentioning

confidence: 99%

Study of post-deposition contamination in low-temperature deposited polysilicon films

Bertomeu

¹

,

Puigdollers

²

,

Peiró

³

et al. 1996

Materials Science and Engineering: B

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The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper.The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to Si atoms, mainly in Si 2 O groups.

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“…which permits the deposition of poly-Si films at low temperatures, high growth rates and with a relatively large (~ 1 m) crystallite sizes [3]. Moreover, this technique has also been used for the H passivation of Si surfaces [4].…”

Section: Hot-wire Chemical Vapour Deposition (Hwcvd) Has Recently Arimentioning

confidence: 99%

Study of post-deposition contamination in low-temperature deposited polysilicon films

Bertomeu¹,

Puigdollers²,

Peiró³

et al. 1996

C,H,N and O in Si and Characterization and Simulation of Materials and Processes

Self Cite

0

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The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper.The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to Si atoms, mainly in Si 2 O groups.

show abstract

“…This regime allowed the deposition of dense material with [220] orientation [17]. Early cells deposited at high T s at Utrecht University [10] where stable but suffered from moderate open circuit voltage (V oc ).…”

Section: Introductionmentioning

confidence: 99%