Polycrystalline silicon thin-film solar cells on glass

Gall, S.; Becker, Christiane; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, Bernd

doi:10.1016/j.solmat.2008.11.029

Cited by 79 publications

(42 citation statements)

References 15 publications

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“…The most direct way of making thin c-Si layers is by cleaving or sawing casted crystalline silicon from ingots [7]. Alternatively, other methods use the crystallization of amorphous silicon (a-Si) or a-Si:H, in particular laser-induced crystallization (LIC) [10] and solid-phase crystallization (SPC) [10,11] resulting in polycrystalline silicon (poly-Si). Using LIC Dore et al [12] made c-Si grains with a size of 1 mm wide and 10 mm long for 10 μm thick films, and solar cells were made having a conversion efficiency of 8.4% [12].…”

Section: Introductionmentioning

confidence: 99%

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

et al. 2014

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Section: Introductionmentioning

confidence: 99%

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

et al. 2014

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“…Of these materials one can emphasize compounds such as Cu 3 BiS 3 , CuInGaSe 2 (CIGS), SnS, and Cu 2 ZnSnSe 4 (CZTSe), among others. Mono-and microcrystalline silicon is still being investigated to develop thin lm solar cells and optoelectronic devices [5,6]. The studies related to electric transport have focused on understanding the mechanisms governing the transport and lead to the quality of material for application in photovoltaic devices [79].…”

Section: Introductionmentioning

confidence: 99%

On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

Dussán

Mesa

2014

Acta Phys. Pol. A

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In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diusional model in semiconductor compounds.

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“…Deposition of AZO and GZO films as a TCO have been extensively studied using several fabrication techniques, i.e., metal-organic chemical a e-mail: shirai@fms.saitama-u.ac.jp vapor deposition (CVD), magnetron sputtering, and solgel methods [6][7][8][9][10], followed by subsequent thermal annealing in vacuum to improve their optical and electrical properties. Among them, the thermal annealing of AZO with n + -a-Si capping layer on top of AZO is one of interests for further improvement of the performance of TCO films [11,12]. In addition, for further high efficiencies of single-and multi-junction solar cells, a new Si thin-film technology is needed, i.e., polycrystalline Si thin film and its alloys [13,14].…”

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

et al. 2012

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Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO) films with and without an amorphous silicon (a-Si) capping layer was investigated using a radio-frequency (rf) argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 10 8 to 10 4 -10 5 Ω cm at maximum surface temperatures Tmaxs above 650• C, whereas the resistivity increased from 10 −4 to 10 −3 -10 −2 Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10 −4 Ω cm, even after TPJ annealing at a Tmax of 825• C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous-and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n + -a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

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Polycrystalline silicon thin-film solar cells on glass

Cited by 79 publications

References 15 publications

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound

Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

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