Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

Saxena, Saurabh; Kim, Dong Cheol; Park, Jeang Hun; Jang, Jin

doi:10.1109/led.2010.2064282

Cited by 17 publications

(14 citation statements)

References 12 publications

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“…The crystallization of precursor amorphous silicon (a-Si) films through non-thermal equilibrium rapid annealing has attracted considerable attentions since it is capable of forming device-grade polycrystalline Si (poly-Si) films on low-cost substrates with poor thermal tolerance [1][2][3][4][5][6][7][8][9][10]. Pulse duration for the crystallization is significantly important in order to fully heat and crystallize precursor a-Si films and to suppress thermal damage onto entire glass substrates, especially when thick ( 41 mm) a-Si films are used as precursor films with the aim of solar cell application.…”

Section: Introductionmentioning

confidence: 99%

“…Pulse duration for the crystallization is significantly important in order to fully heat and crystallize precursor a-Si films and to suppress thermal damage onto entire glass substrates, especially when thick ( 41 mm) a-Si films are used as precursor films with the aim of solar cell application. We have so far investigated the crystallization of a-Si films using flash lamp annealing (FLA), millisecond-order flash discharge from Xe lamps [3,5,6]. Thanks to its proper annealing duration, 4.5 mmthick poly-Si films can be formed on glass substrates without serious thermal damage to entire glass substrates [11,12].…”

Section: Introductionmentioning

confidence: 99%

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Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

Ohdaira

Matsumura

2013

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

Ohdaira

Matsumura

2013

Journal of Crystal Growth

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“…[1][2][3][4][5][6][7][8] This non-thermal equilibrium sub-second annealing sometimes induces explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. [9][10][11][12][13][14][15] It has been know that the EC of a-Si occurs in liquid-phase and/or in solid-phase, which results in different EC velocity (v EC ).…”

mentioning

confidence: 99%

Lateral Crystallization Velocity in Explosive Crystallization of Amorphous Silicon Films Induced by Flash Lamp Annealing

Ohdaira

Tomura

Ishii

et al. 2011

Electrochem. Solid-State Lett.

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We propose a new method to estimate the explosive crystallization (EC) velocity (v EC ) of amorphous silicon (a-Si) films using multi-pulse flash lamp annealing (FLA). This system produces discrete pulses at frequencies of 1-10 kHz to form a quasi-millisecond pulse. The multi-pulses leave behind macroscopic stripe patterns on the surfaces of polycrystalline Si (poly-Si) films, the widths of which are indications of v EC . We find that catalytic chemical-vapor-deposited (Cat-CVD) and sputtered a-Si films show v EC of $4 m/s, whereas the use of electron-beam-evaporated a-Si results in much higher v EC of $14 m/s, indicating the emergence of different EC mechanisms.Rapid annealing using sub-second pulse light is of great importance as the methods of crystallizing precursor amorphous silicon (a-Si) films to form device-quality polycrystalline Si (poly-Si) films because of the availability of low-cost glass or plastic substrates. [1][2][3][4][5][6][7][8] This non-thermal equilibrium sub-second annealing sometimes induces explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. 9-15 It has been know that the EC of a-Si occurs in liquid-phase and/or in solid-phase, which results in different EC velocity (v EC ). 9-13 In-situ observation of EC, however, is not easy because of enormously high v EC on the order of m/s. Although v EC of a-Si films has been experimentally estimated by some of in-situ or ex-situ methods, 9,14 they require complicated experimental system or expensive equipments.We have so far found that flash lamp annealing (FLA), millisecond-order annealing using Xe lamps, can induce EC of a few m-thick a-Si films and the EC observed is based on solid-phase nucleation (SPN) and partial liquid-phase epitaxy (LPE), 16 unlike previously reported results that have shown the clear evidences of EC through simple LPE. 9 The v EC of Si films in the case of FLA, however, has not been evaluated, because of the difficulty of using an additional measurement system in a FLA system that has a character of large-area pulse emission. The purpose of this study is to utilize a quasi-millisecond multi-pulse FLA system, instead of conventional single millisecond-pulse FLA, in order to estimate the v EC of Si films from signatures left on poly-Si films formed due to multi-pulse emission which induces temperature modulation of Si during millisecond treatment. The determination of v EC can contributes to understand the mechanism of EC.We first formed 60-nm-thick Cr films on 20 Â 20 Â 0.7 mm 3 -sized quartz substrates by sputtering in order to suppress Si film peeling during FLA. 17 We then prepared 2-4 m-thick a-Si films formed by catalytic chemical vapor deposition (Cat-CVD), sputtering, and electron-beam (EB) evaporation on Cr-coated quartz glass substrates, the detailed deposition conditions of which are summarized in Table I. FLA system used in this study, produced by Design System Co., Ltd., can supply a quasi-millisecond pulse consisting of discrete sub-pulses emitted at variabl...

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“…It is well known that the Si surface treatment is crucial for Si grown epitaxially at low temperature [8][9]. Because even if there is a very tiny particle of dust or impurity especially the native oxide on the surface, it is clear that it disturbs growing the silicon film epitaxially.…”

Section: Figure 2 Sem and Optical Images Of 1000 å-Thick Ptype Poly-smentioning

confidence: 99%

“…FLA is one of promise technologies to crystallize a-Si films in a quick time (~ ms) without critical damage [8]. Additionally, the as-deposited films have a controlled crystalline volume fraction and the p-type polySi window layer has high conductivity at a high transparency.…”

Section: Introductionmentioning

confidence: 99%

Low temperature epitaxial growth of thin film silicon by PECVD for use in solar cell applications

Won

Park

Jang

2011

2011 37th IEEE Photovoltaic Specialists Conference

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We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340 annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain > 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.

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Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

Cited by 17 publications

References 12 publications

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

Lateral Crystallization Velocity in Explosive Crystallization of Amorphous Silicon Films Induced by Flash Lamp Annealing

Low temperature epitaxial growth of thin film silicon by PECVD for use in solar cell applications

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