Polycrystalline thin-film CuInSe<sub>2</sub>/CdZnS solar cells

Mickelsen, R. A.; Chen, W.S.; Hsiao, Yu-Hsuan; Lowe, V.E.

doi:10.1109/t-ed.1984.21566

Cited by 113 publications

(21 citation statements)

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“…The Cu, In, Ga, and Se deposition rates and the substrate temperatures were remained constant for the single-stage process [28], as depicted in Figure 6a. The bi-layer process, which consists of two deposition stages, was developed by Boeing company [14,15]. As illustrated in Figure 6b, the Cu-rich film was deposited for the first stage, during which the grain growth could be enhanced.…”

Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 99%

“…Furthermore, the co-evaporation method provides the most flexible capabilities to develop the different deposition procedures for the growth of the CIGS films, such as the bi-layer process [14,15] and three-stage process [16]. Not only can the precise control of the compositions for the as-deposited CIGS films be easily achieved, but also the grading bandgap structures, resulting from various depth profiles of Ga distribution within the CIGS films, can be realized by using the co-evaporation process.…”

Section: Introductionmentioning

confidence: 99%

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Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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Abstract:The two-step process including the deposition of the metal precursors followed by heating the metal precursors in a vacuum environment of Se overpressure was employed for the preparation of Cu(In,Ga)Se 2 (CIGS) films. The CIGS films selenized at the relatively high Se flow rate of 25 Å/s exhibited improved surface morphologies. The correlations among the two-step process parameters, film properties, and cell performance were studied. With the given selenization conditions, the efficiency of 12.5% for the fabricated CIGS solar cells was achieved. The features of co-evaporation processes including the single-stage, bi-layer, and three-stage process were discussed. The characteristics of the co-evaporated CIGS solar cells were presented. Not only the surface morphologies but also the grading bandgap structures were crucial to the improvement of the open-circuit voltage of the CIGS solar cells. Efficiencies of over 17% for the co-evaporated CIGS solar cells have been achieved. Furthermore, the critical factors and the mechanisms governing the performance of the CIGS solar cells were addressed.

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Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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“…242 Some improvement was later achieved by alloying the CdS with ZnS to increase its bandgap 249 (an improvement previously exploited in copper suldife cells 213 ), but the next significant step in the improvement of emitter structures for CIS solar cells was achieved by replacing the extrinsically doped n + -ZnCdS:In part of the ZnCdS layer, with n + -ZnO, 250 a higher-bandgap transparent conducting oxide (TCO). This last structure (although usually without zinc in the undoped CdS layer that contacts the CIS) is characteristic of all the highest efficiency devices fabricated nowadays, and the thin (30 to 50 nm) CdS layer is often referred to as the buffer layer.…”

Section: Emitter Structuresmentioning

confidence: 99%

Copper Indium Selenides and Related Materials for Photovoltaic Devices

Stanbery¹

2002

Critical Reviews in Solid State and Materials Sciences

309

207

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“…PL has been performed on CIGS epitaxial layers [5][6][7], polycrystals [8] and bulk single crystals [9][10]. Only a few studies have incorporated photoluminescence excitation spectroscopy (PLE), with mixed results [6,11].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se 2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect.

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Polycrystalline thin-film CuInSe₂/CdZnS solar cells

Cited by 113 publications

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Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Copper Indium Selenides and Related Materials for Photovoltaic Devices

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

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Polycrystalline thin-film CuInSe2/CdZnS solar cells

Cited by 113 publications

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Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Copper Indium Selenides and Related Materials for Photovoltaic Devices

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

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Polycrystalline thin-film CuInSe₂/CdZnS solar cells

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films