Strong electromagnetic wave reflection loss concomitant
with second
emission pollution limits the wide applications of electromagnetic
interference (EMI) shielding textiles. Decoration of textiles by using
various dielectric materials has been found efficient for the development
of highly efficient EMI shielding textiles, but it is still a challenge
to obtain EMI shielding composites with thin thickness. A route of
interfacial engineering may offer a twist to overcome these obstacles.
Here, we fabricated a Ni nanoparticle/SiC nanowhisker/carbon cloth
nanoheterostructure, where SiC nanowhiskers were deposited by a simple
manufacturing method, namely, laser chemical vapor deposition (LCVD),
directly grown on carbon cloth. Through directly constructing a Ni/SiC
interface, we find that the formation of Schottky contact can influence
the interfacial polarization associated with the generation of dipole
electric fields, leading to an enhancement of dielectric loss. A striking
feature of this interfacial engineering strategy is able to enhance
the absorption of the incident electromagnetic wave while suppressing
the reflection. As a result, our Ni/SiC/carbon cloth exhibits an excellent
EMI shielding effectiveness of 68.6 dB with a thickness of only 0.39
mm, as well as high flexibility and long-term duration stability benefited
from the outstanding mechanical properties of SiC nanowiskers, showing
potential for EMI shielding applications.