Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP <i>p</i>-<i>n</i> junction structures

Yeats, R.; Dessonneck, K. Von

doi:10.1063/1.94583

Cited by 34 publications

(7 citation statements)

References 8 publications

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“…After imidization, however, they have properties that inhibit processability, insolubility, intractability, and high glass transition temperature. [1][2][3][4] In the last decade, several copolyimides containing polyorganosiloxane in their copolymer backbone, as block units, have been prepared to improve processing, and they have been applied in high-performance adhesives and special coatings. [5][6][7][8] Recently, some copolyimides containing polyorganofluorosiloxane have been reported that exhibit low dielectric constants.…”

Section: Introductionmentioning

confidence: 99%

Preparation and properties of poly(methyltrifluoropropylsiloxane‐b‐imide) copolymer. I

Kang

Kim

2002

J of Applied Polymer Sci

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Poly(methyltrifluoropropylsiloxane-block-imide) copolymers (PSBPI), containing various contents of fluorosiloxane, were prepared by the thermal imidization of 3,3Ј,4,4Ј-benzophenonetetracarboxylic dianhydride (BTDA), 4,4Ј-oxydianiline (ODA), and ␣,-aminopropyl-terminated poly(methyltrifluoropropylsiloxane) prepolymer (APMFS). APMFS was prepared from an equilibrium polymerization of (3,3,3-trifluoropropyl)methylcyclotrisiloxane (D 3 Me,CH2,CH2,CF3 ) with 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane in the presence of the tetramethylammoniumhydroxide (TMAH) catalyst. The content of APMFS, in the reaction mixture, was varied from 0 to 30 wt % of diamine. The structure of copolymer was confirmed by FTIR spectroscopy. The thermal stability, linear coefficient of thermal expansion, modulus, X-ray pattern, and other properties, such as surface enrichment behavior and solubility, were investigated. PSBPI exhibited relatively low crystallinity regardless of the APMFS content in the copolymer. On the other hand, thermogravimetric, thermomechanical, dynamic mechanical, and surface properties were affected by the content of APMFS segment in the copolymer backbone.

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Section: Introductionmentioning

confidence: 99%

Preparation and properties of poly(methyltrifluoropropylsiloxane‐b‐imide) copolymer. I

Kang

Kim

2002

J of Applied Polymer Sci

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“…In order to optimize the dark current performance, many methods including post pixel processing passivation and various epilayer designs have been developed, but none of these techniques have fully eliminated the leakage at the surface [6][7][8][9][10][11][12]. Relatively recently, barrier structured detectors have been numerically and experimentally shown to produce lower dark current than conventional pn junction detectors and to operate at higher operation temperatures .…”

Section: Introductionmentioning

confidence: 99%

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Uzgur¹,

Kocaman²

2019

Turk J Elec Eng & Comp Sci

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Dark current optimization with band gap engineering has been numerically studied for InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in constructing the barrier and dipole deltadoped layers are placed in both sides of the graded layers for eliminating valence band offset. As a result, the high band gap barrier layer blocks the majority carriers and allows minority carrier flow while minimizing various dark current components, as expected from an nBn detector. Substantial improvement has been shown in the dark current level without compromising any photoresponse compared to the conventional pn junction and recently proposed all InGaAs nBn type photodetectors.

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“…Also, PI physically passivates and protects the semiconductor surfaces from the ambient environment while maintaining or even improving the electrical performance of the device measured prior to passivation. A number of groups have reported on the passivating behavior of PI in InGaAs/InP [3,4,5].…”

Section: Introductionmentioning

confidence: 99%