Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors

Yoo, Sungmi; Kim, Yun Ho; Ka, Jae‐Won; Kim, Yong Seok; Yi, Mi Hye; Jang, Kwang‐Suk

doi:10.1016/j.orgel.2015.05.012

Cited by 26 publications

(8 citation statements)

References 33 publications

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“…In addition, the surface morphology of the bilayer gate dielectric (high-K PVA/low-K PVP) allows more suitable growth of the pentacene grain because the PVP layer is deposited above the organic PVA surface instead of an inorganic ITO gate surface. Compared with other similar papers, the improved u FE in our study is about 1.12 cm 2 /Vs, significantly better than that of the reported papers previously [19][20][21][22]. The obvious performance improvement can be attributed to the high-K PVA/low-K PVP bilayer structure based upon the high-K characteristics of PVA and the hydrophobic surface of PVP.…”

Section: Introductioncontrasting

confidence: 64%

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

et al. 2021

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In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm2/(Vs), 7 times higher than that of the control sample.

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Section: Introductioncontrasting

confidence: 64%

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

et al. 2021

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“…From these results, it was found that a single-layered diluted CGI (1:1) fabricated with a 3 krpm spin-coating speed is the optimized condition for the gate insulator. Compared to the conventional organic gate insulators, such as poly(methyl methacrylate), polyimide/polyvinyl alcohol, and poly(4vinylphenol), the single-layered diluted CGI (collodion:ethanol = 1:1) fabricated with a 3 krpm spin-coating speed exhibited high-dielectric strength (J < 10 −10 A/cm 2 in the range of 1.1 MV/cm) [15][16][17]. Thus, additional analyses were done, such as FESEM and analyses of the C-V curve of CGI and of the I-V curve of an a-IGZO TFT with CGI, to determine if a single-layered diluted CGI (1:1) fabricated with a 3 krpm spin-coating speed could be used for the gate insulator of a-IGZO TFTs.…”

Section: Resultsmentioning

confidence: 99%

Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors

Kim

Tak

Kim

2017

Journal of Information Display

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A novel organic material named 'collodion' was suggested as a gate insulator for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To find the optimized condition of the collodion gate insulator (CGI), the following three parameters of collodion solution were controlled: (1) the concentration of collodion solution; (2) the number of stacked layers; and (3) the spin-coating speed. The single-layered diluted CGI (collodion:ethanol = 1:1) that was fabricated with a 3 krpm spin-coating speed exhibited an acceptable dielectric strength (J < 10 −10 A/cm 2 in the range of 1.1 MV/cm) and a high-dielectric constant ( ∼ 6.57) for the gate insulator layer. As a result, a-IGZO TFTs with CGI showed high-field effect mobility ( ∼ 17.11 cm 2 /Vs).

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“…3,4 A number of synthetic (e.g. polylactic acid (PLA), 5 polycaprolactone, 6 polyvinyl alcohol 7,8 ) and naturally occurring polymers (derived from paper, [9][10][11][12] silk, 13,14 gelatin, [15][16][17] cellulose-based polymers [18][19][20], all of which are derived from renewable resources, have found application as either substrate or dielectric material in the fabrication of electronic devices. Future developments, especially in the area of personalised electronic devices, will require the fabrication of electronic implants which are capable of undergoing controlled degradation within the human body.…”

Section: Introductionmentioning

confidence: 99%

Polylactide‐perylene derivative for blue biodegradable organic light‐emitting diodes

Al-Attar

Alwattar

Haddad

et al. 2020

Polymer International

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In this work we demonstrate, for the first time, the use of polylactic acid (PLA) as a biodegradable host matrix for the construction of the active emissive layer of organic light-emitting diode (OLED) devices for potential use in bioelectronics. In this preliminary study, we report a robust synthesis of two fluorescent PLA derivatives, pyrene-PLA (AH10) and perylene-PLA (AH11). These materials were prepared by the ring opening polymerisation of L-lactide with hydroxyalkyl-pyrene and hydroxyalkyl-perylene derivatives using 1,8-diazabicyclo[5.4.0]undec-7-ene as catalyst. OLEDs were fabricated from these materials using a simple device architecture involving a solution-processed single-emitting layer in the configuration ITO/PEDOT:PSS/PVK:OXD-7 (35%):AH10 or AH11 (20%)/TPBi/LiF/Al (ITO, indium tin oxide; PEDOT:PSS, poly(3,4-ethylenedioxythiophene) doped with poly (styrenesulfonic acid); PVK, poly(vinylcarbazole); OXD-7, (1,3-phenylene)-bis-[5-(4-tert-butylphenyl)-1,3,4-oxadiazole]; TPBi, 2,2 0 ,2 00-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)). The turn-on voltage for the perylene OLED at 10 cd m-2 was around 6 V with a maximum brightness of 1200 cd m-2 at 13 V. The corresponding external quantum efficiency and device current efficiency were 1.5% and 2.8 cd A-1 respectively. In summary, this study provides proof of principle that OLEDs can be constructed from PLA, a readily available and renewable bio-source.

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Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors

Cited by 26 publications

References 33 publications

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors

Polylactide‐perylene derivative for blue biodegradable organic light‐emitting diodes

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