The effect of nanoparticle
incorporation inside reduced graphene
oxide (rGO) layers on the electrical transport properties has been
investigated by temperature-dependent resistivity measurements on
rGO and rGO-zinc selenide (rGO-ZnSe) thin films in a wide temperature
range of 84–473 K. The fraction of ZnSe in rGO-ZnSe composite
has been varied from 26 to 98%. Resistance curve derivative analysis
reveals a conduction mechanism consistent with Mott two-dimensional
(2D) variable range hopping (VRH) in rGO films, whereas different
rGO-ZnSe samples exhibit three-dimensional (3D) VRH at lower temperatures
(84–280 K). At higher temperatures (290–473 K), Arrhenius-like
transport was observed for all of the samples. A model where ZnSe
nanoparticles are incorporated inside wrinkled rGO layers to facilitate
interlayer connections, thus 3D charge transport, has been proposed.
Room-temperature carrier mobility values, calculated using trap-free
space charge limited current conduction model in the dark, reach a
maximum at 54 wt % ZnSe content. Vibrating sample magnetometer and
electron paramagnetic resonance measurements reveal paramagnetic nature
of the composites, in contrast to the diamagnetic behavior of pure
rGO and ZnSe at room temperature. Evidences from X-ray photoelectron
spectroscopy and Fourier transform infrared spectroscopy suggest that
the unreduced carbonyl groups present at the edge of rGO sheets could
be held responsible for observed paramagnetism in rGO-ZnSe composites.