Polymer Gate Dielectrics and Conducting-Polymer Contactsfor High-Performance Organic Thin-Film Transistors

Abstract

Organic thin‐film transistors and circuits have been fabricated on glass and on flexible substrates, achieving carrier mobilities of 0.3 cm2 V–1 s–1 on glass. In particular, the authors investigate how the substitution of inorganic gate dielectrics and metals with solution‐processed polymers affects the performance of the transistors. Two pentacene inverters on glass are shown in the Figure (see also cover).

Controlled Topology of Block Copolymer Gate Insulators by Selective Etching of Cylindrical Microdomains in Pentacene Organic Thin Film Transistors

“…[1] In particular, polymer gate insulators have been of great attention due to their cost effective fabrication capability as well as flexibility for all organic devices. [2] In spite of the disadvantages of polymeric insulators such as their low dielectric constant and high susceptibility for organic solvents which can be overcome for example by hybridization with high k inorganic nanofillers for low voltage operation [3,4] and by insoluble cross linking network formation, [5,6] polymeric insulators have been still considered as one of the strongest candidates mainly because of their interfacial compatibility with organic semiconductors that allows the researchers easily to control the chemical and physical properties of insulator surface and thus to optimize the device performance. [7] The orientation of organic semiconductors in a bottom gate OTFT is, indeed, significantly affected by the chemical and physical properties such as surface energy of polymer gate insulator below.…”

Water-stable organic transistors and their application in chemical and biological sensors

“…The polymer matrix for the gate dielectric layer in this study is poly(4-vinylphenol) (PVP), selected for its proven compatibility with various organic semiconductors (20,24,25). Moreover, its hydroxyl groups are well suited for cross-linking with commercially available, ambient-stable cross-linkers, such as 4,4Ј-(hexaf luoroisopropylidene)diphthalic anhydride (HDA) and suberoyl chloride (SC).…”

Organic complementary ring oscillators using a functional polymer interfacial layer for highly improved oscillation frequency

“…The poor electrical performance of the n-type OFETs without the PMMA interfacial layer is attributed to the surface traps of PVP layer. PVP is one of the most widely used polymers as a gate dielectric in OFETs because of its good insulating property and relatively high dielectric constant [11,12], but the pendant hydroxyl groups of PVP act as electron traps which result in a poor combination with n-type semiconductors. The improved electrical performance with the PMMA interfacial layer indicates that the PMMA can efficiently cover the surface traps of the PVP layer which hinders a current flow.…”