Polymeric electronic oscillators based on bistable conductance devices

Plasmon-enhanced catalysis of photo-induced charge transfer from TCNQF4− to TCNQF42−

“…4. To our knowledge, the Raman spectra of Ag 2 -TCNQF 4 have not yet been reported in the literature. This might be because there are only two papers referring to the successful synthesis of Ag 2 -TCNQF 4 .…”

“…One-dimensional (1D) metal-organic charge transfer semiconductors, metal-7,7,8,8-tetracyanoquinodimethane (M-TCNQ, where M ¼ Cu + or Ag + ), have received an abundance of attention because of their electrical and optical bistable switching behaviors, memory functions, and eld emission properties. [1][2][3][4][5][6][7][8][9][10] When TCNQ À is replaced by tetra-uoride (2,3,5,6-tetrauoro-7,7,8,8-tetracyanoquinodimethane, TCNQF 4 À ), the metal-organic semiconductor (M-TCNQF 4 where M ¼ Cu + or Ag + ) adopts a delocalized electronic structure and the electron affinity is raised as well since TCNQF 4 À is a stronger electron acceptor relative to TCNQ À . 11,12 In recent studies, these uorinated analogues have received renewed attention on their spatial structures, synthesis methods and potential applications.…”

Self-oscillation in electrochemical transistors: An RLC modeling approach

“…The complexity of this process makes it challenging to develop physical models to simulate the device behaviors precisely, especially for unexpected phenomenon, such as current oscillations. There are a few examples reporting current oscillations in polymeric electronic devices, including polyaniline (PANI) transistors [5] and bistable devices [6]. Both of them explained the oscillations by RC equivalent circuits with variable resistance and a number of assumptions.…”

Phase-change oscillations in silicon microwires

“…Relaxation oscillations of this nature have been modeled by Freire et al 21 and Schmidt and Callarotti 1,2 as circuits consisting of a dc voltage supply, load resistor, and a capacitor in parallel with a resistance switching element. These models assume that the resistance switching element remains in high-resistance state ͑R W = R W solid ͒ until the voltage across the device reaches a threshold value ͑V crit ͒, where the device instantaneously switches to the low-resistance state ͑R W = R W liquid ͒.…”