Polymeric silicon‐containing resist materials

Miller, Robert D.; Wallraff, Gregory M.

doi:10.1002/amo.860040206

Cited by 22 publications

(12 citation statements)

References 109 publications

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“…While it is virtually assured that the absorption problem will be successfully circumvented for 193 nm resists, it is less clear that this will be the case when future exposure tools with an even shorter wavelength (e.g., fluorine excimer laser emission at λ = 157 nm or an extreme-UV (EUV) source using a wavelength of 13 nm) are used. These systems may require a more complex photoresist technology known as thin-film imaging (TFI) …”

Section: B Photoresist Technologymentioning

confidence: 99%

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Lithographic Imaging Techniques for the Formation of Nanoscopic Features

1999

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Over the past 30 years the world market for semiconductors has grown at an average annual rate of approximately 15%. This growth has been maintained by the industry's unique ability to consistently provide over this time frame higher device performance at lower cost (achieving a 25-30% per-year cost reduction per function). Microlithography is the key technological driving force for this; in large part, the overall rate of progress in microelectronics is controlled by the rate of advances in microlithographic tools, methods, and materials. Today, the photolithographic technologies that have served the microelectronics community since its inception are widely viewed to be nearing their limits of extendibility. If the historical growth rate is to be maintained in the future, new imaging technologies with the capability of forming features with sub-100 nm dimensions must be devised and refined. In this paper we provide an overview of the issues to be considered for patterning in the sub-100 nm regime and describe the imaging technologies which are currently being evaluated for such use.

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Section: B Photoresist Technologymentioning

confidence: 99%

“…These systems may require a more complex photoresist technology known as thin-film imaging (TFI). 32 Thin-Film Imaging Resists. Figure 11 shows the process flow for bilayer and top surface imaged (TSI) resists, the two primary types of TFI systems.…”

Section: B Photoresist Technologymentioning

confidence: 99%

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

1999

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“…for anchorage-dependent tissue culture or combinatorial chemistry); it can generate only two-dimensional microstructures; and it is directly applicable only to a limited set of photosensitive materials (e.g. photoresists) (17). The characteristics of photolithography are such that it is relatively little used for microfabrication based on materials other than photoresists; to work with other materials it is necessary to attach chromophores or add photosensitizers, and neither type of procedure is convenient.…”

Section: Introductionmentioning

confidence: 99%

Soft Lithography

Xia

Whitesides

1998

Angewandte Chemie International Edition

4,482

1,278

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Elastomeric stamps and molds provide a great opportunity to eliminate some of the disadvantages of photolithograpy, which is currently the leading technology for fabricating small structures. In the case of "soft lithography" there is no need for complex laboratory facilities and high-energy radiation. Therefore, this process is simple, inexpensive, and accessible even to molecular chemists. The current state of development in this promising area of research is presented here.

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“…In the past 10 years there has been extensive research on the development of new polymers for microlithographic patterning. One focus of this research, particularly for bilayer applications, has been on silicon-containing polymers that form a protective oxide layer when exposed to an oxygen plasma. , The etch resistance of this oxide to the oxygen plasma provides the selectivity needed for lithographic image transfer. For this reason, considerable effort has been devoted to understanding the mechanism behind the formation of this protective oxide coating.…”

Section: Introductionmentioning

confidence: 99%

Curious Morphology of Silicon-Containing Polymer Films on Exposure to Oxygen Plasma

Chan¹,

Thomas²,

Frommer³

et al. 1998

Chem. Mater.

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Thin films of silicon-containing polymers were studied to investigate changes in surface composition and morphology on exposure to an oxygen plasma. For low molecular weight poly(pentamethyldisilylstyrene) (P(PMDSS)), a reticulated structure was observed by atomic force microscopy (AFM) that could limit future lithographic applications of these materials. The reticulations were of approximately 1 µm in width and 5 µm in length, though a higher molecular weight polymer resulted in smaller feature sizes. In polysilane polymers containing silicon in the backbone and molecular weights significantly larger than the entanglement molecular weight, the feature dimensions were even smaller. Films etched at lower temperature (0 °C) displayed none of the reticulated morphology, retaining instead the smooth appearance of pre-etched films. It was found by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) that a thin (<100 Å) layer of SiO x formed on the surface of all of the studied silicon-containing polymer films. Appearance of the reticulated morphology required the combined presence of heating, oxygen plasma, and silicon in the polymer. The reticulated structures are believed to result from the destabilization of the thin films as they undergo the transition from a nonpolar organosilane to a polar oxide.

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Polymeric silicon‐containing resist materials

Cited by 22 publications

References 109 publications

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

Soft Lithography

Curious Morphology of Silicon-Containing Polymer Films on Exposure to Oxygen Plasma

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