Polysilicon etching and profile control in a CCl₄–O₂ plasma

Abstract

Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma source

Generalized Oscillator Strengths for the Valence Shell Excitations in Carbon Tetrachloride Studied by Fast Electron Impact

“…Carbon tetrachloride (CCl 4 ) has a wide range of applications in industrial fields such as cleaning agents, fire extinguishers, plasma etching, etc . Since the photodissociation of CCl 4 makes it destructive to the ozone layer in the stratosphere, − the excited states of CCl 4 have attracted extensive interest since the 1970s.…”

“…5−7 Carbon tetrachloride (CCl 4 ) has a wide range of applications in industrial fields such as cleaning agents, fire extinguishers, plasma etching, etc. 8 Since the photodissociation of CCl 4 makes it destructive to the ozone layer in the stratosphere, 9−11 the excited states of CCl 4 have attracted extensive interest since the 1970s. Experimentally, the OOS densities or the equivalent photoabsorption cross sections of the valence shell excitations of CCl 4 have been studied by the photoabsorption method 12−15 and the dipole(e, e) method.…”