The advanced power electronic packaging technology developed at GE CRD eliminates the need for wire bonds, offers low inductance striplined power electrodes, and low parasitic impedance. In addition, the planarity of the top layer structure and the thermal base provide double-sided cooling capability and improve the size, weight, cost, and thermal and electrical performance of the package.
Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma source
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