High performance power DMOSFET with integrated Schottky diode

Korman, C.S.; Chang, H.-R.; Shenai, K.; Walden, J.P.

doi:10.1109/pesc.1989.48488

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Light Emission Models1

B Expected Problem Of Conduction Loss At Higher Switching F1

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Cited by 8 publications

(2 citation statements)

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“…It is described in the second part of this section, paying particular attention to the DMOS component. From our experience, we also noticed that this type of structure can emit in a particular voltage configuration, called diode configuration [7], [8]. In this case, the emission model finds a direct proportionality between the light emitted and the density of current flowing in the channel.…”

Section: Light Emission Modelsmentioning

confidence: 81%

Analog and mixed-signal circuits simulation for product level EMMI analysis

Melis

Simeu

Auvray

et al. 2020

Microelectronics Reliability

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Section: Light Emission Modelsmentioning

confidence: 81%

Analog and mixed-signal circuits simulation for product level EMMI analysis

Melis

Simeu

Auvray

et al. 2020

Microelectronics Reliability

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“…Even a multichip module will not work because the bonding wire has inductance on the nanohenley order. To increase switching frequency up to the 10-MHz range, an MOSFET integrated with an SBD on one chip [13] should be used. This device still shows a parasitic inductance between the separated MOSFET and SBD areas.…”

Section: B Expected Problem Of Conduction Loss At Higher Switching Fmentioning

confidence: 99%

Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode

Yamashita

Murakami

Yachi

1998

IEEE Trans. Power Electron.

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The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1-MHz switching, the advantage of the low onresistance MOSFET will almost be lost. To reduce the conduction loss for 10-MHz switching, the parasitic inductance must be a subnanohenley.

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