Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode

Yamashita, N.; Murakami, Naoki; Yachi, Toshiaki

doi:10.1109/63.704135

Cited by 38 publications

(10 citation statements)

References 11 publications

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“…A MOSFET device is generally accustomed with an anti-parallel diode, and when the MOSFET becomes turn-on, diode be nonconducting and vice-versa [26,27]. MOSFET and the associated diode power losses could be analysed as follows.…”

Section: Switching Losses and System Efficiencymentioning

confidence: 99%

Improvements to the H5 inverter topology for transformer‐less grid‐photovoltaic interface applications

Datta

Sarker

2020

IET Renewable Power Generation

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Incorporation of transformer in grid-photovoltaic (PV) interfaces makes the systems bulky and expensive, and reduces the system efficiency. Consequently, in recent years, researchers have proposed many transformers-less inverter topologies for grid-PV interface applications. Among them, the H5 topology is one with the simplest structure, least switches, and higher efficiency. However, its ground-leakage current repression property is unsatisfactory due to its asymmetry structure and switch-junction capacitance effects. From the aspect of single-phase transformer-less grid-PV interface applications, this study proposes an improved H5 topology, namely 2D-H5 topology, by incorporating a capacitor divider with a clamp branch consisting of two blocking diodes in the basic H5 structure in order to maintain constant common-mode (CM) voltage. The constant CM voltage will cause no CM (i.e. ground-leakage) current through the stray capacitance between the PV array and the ground. Besides, the proposed topology provides the same differential-mode characteristic as good as in a unipolar modulation full-bridge (H4) inverter for ensuring quality of grid injected power. The proposed topology has been analysed in detail, and verified with satisfactory simulation and experimental results in comparison to the existing transformer-less H5 topology. The proposed improvement enables a reduction in the ground-leakage current in conformity with PV interface standards.

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Section: Switching Losses and System Efficiencymentioning

confidence: 99%

Improvements to the H5 inverter topology for transformer‐less grid‐photovoltaic interface applications

Datta

Sarker

2020

IET Renewable Power Generation

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“…1) also has to be addressed for four-quadrant operation. In low-voltage conversion, a technique for MOSFET intrinsic diode deactivation is to connect a silicon Schottky diode in anti-parallel [24]. However, silicon Schottky diodes do not have sufficient voltage ratings for use at off-line voltages.…”

Section: Multilevel Converter Topology Selection and Operationmentioning

confidence: 99%

High-Efficiency NPC Multilevel Converter Using Super-Junction MOSFETs

McNeill

Yuan

Anthony

2016

IEEE Trans. Ind. Electron.

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Super-junction MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behavior of their intrinsic diodes and their output capacitance characteristics make their deployment in freewheeling locations challenging. In this paper, a new snubber circuit arrangement has been proposed for a three-level converter to minimize the effect of the output capacitance. This is used in conjunction with diode deactivation circuitry to address the diode recovery behavior. Results are given for a three-phase three-level neutral point clamped converter running from an input voltage of 720 V and supplying a 3-kVA load. The converter operates with no forced cooling and efficiency is estimated at 99.3%. Apart from lower energy consumption, an advantage of high efficiency is a reduced converter mass due to reduced cooling requirements.

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“…Some approaches have been reported to handle this problem so far. An external SiC Schottky barrier diode (SBD) anti-paralleled with the SiC MOSFET is a popular method [9], whereas the resulting introduction of extra capacitance and inductance is unexpected [10]. A SiC MOSFET with embedded SBD has been put forward to solve this issue [11] [12], which shows a better performance in terms of the switching characteristics and the bipolar degradation suppression.…”

Section: Introductionmentioning

confidence: 99%

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

Zhou

Gong

Jia

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS), gate charge (Q G) and gate-to-drain charge (Q GD) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON), tremendously enhanced figures of merit (R ON ×Q G and R ON ×Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications. Index Terms SiC planar MOSFETs, bipolar degradation, dynamic performance.

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Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode

Cited by 38 publications

References 11 publications

Improvements to the H5 inverter topology for transformer‐less grid‐photovoltaic interface applications

Improvements to the H5 inverter topology for transformer‐less grid‐photovoltaic interface applications

High-Efficiency NPC Multilevel Converter Using Super-Junction MOSFETs

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

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