Porous A3B5 compounds

Sabataityt, J.; Šimkien, I.; Баранов, А. Н.; Bendorius, R. A.; Pačebutas, V.

doi:10.1016/s0928-4931(02)00223-0

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…They found that the emission was strongly dependent on the particle size and concluded that the PL process takes place across the band gap of GaSb nanocrystals. On the other hand, Sabataityté et al 13 obtained red PL at 1.67-1.85 eV from a porous GaSb layer and assumed that this emission was related to a quantum confinement effect. However, the visible luminescence observed in the GaSb nanocrystals investigated in this work can be explained as arising from gallium and antimony oxide defect states.…”

Section: Resultsmentioning

confidence: 99%

Visible cathodoluminescence from nanocrystalline GaSb obtained by mechanical milling

Borini¹,

Méndez²,

Piqueras³

2003

Journal of Applied Physics

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The luminescence of mechanically milled GaSb has been investigated by means of cathodoluminescence (CL) in the scanning electron microscope. Transmission electron microscopy reveals that the GaSb powders obtained after the milling process contain nanocrystals with sizes of few nanometers. CL spectra of the GaSb powders show a bright blue-green luminescence visible to the naked eye, even at room temperature. Furthermore, a shift from blue to green has been observed depending on the milling time. In order to clarify the origin of this visible luminescence, we have performed a CL study on gallium oxide (Ga2O3) and antimony oxide (Sb2O3) powders, which exhibit several emission bands in the visible range. Comparison of these results with CL spectra from GaSb powders shows that oxidation during the milling process of GaSb plays an important role in the luminescence features observed.

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Section: Resultsmentioning

confidence: 99%

Visible cathodoluminescence from nanocrystalline GaSb obtained by mechanical milling

Borini¹,

Méndez²,

Piqueras³

2003

Journal of Applied Physics

View full text Add to dashboard Cite

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“…In general, semiconductors of the A 2 B 6 group, in contrast to semiconductors A 3 B 5 , show poor ability to structure during electrochemical treatment [26]. For example, the formation of a wide class of nanostructures on the surface of indium phosphide, gallium arsenide, and gallium phosphide is observed in a wide range of etching regimes [27,28]. The surfaces of ZnO, ZnSe, ZnTe and others are quite stable for many electrolytes [29,30].…”

Section: Sem Analysismentioning

confidence: 99%

Formation of CdO/CdS/textured-ZnO/ZnO heterostructures by chemical deposition

Suchikova

Lazarenko

Ковачов

et al. 2022

Phys. Chem. Solid St.

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CdO/CdS/textured-ZnO/ZnO heterostructure was synthesized using a combination of electrochemical etching and chemical deposition methods. Electrochemical etching was used to form a textured ZnO layer. Chemical deposition of a solution containing CdCl2 was performed to prepare a CdS film with CdO nanoparticles on the surface. The obtained nanocomposite was characterized using SEM, EDX and Raman methods for structural, morphological and component studies. SEM images and Raman scattering showed the existence of cubic phase of CdO nanocrystals. The SEM study revealed the dispersion of 50-200 nm agglomerated nanostructures on the surface of CdS film.

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“…Technologies for the use of binary semiconductors have also become widespread [9,10]. Semiconductors of the A3B5 group, namely InP [11,12], GaAs [13,14] and GaP [15,16] have become the main materials in the laser [17,18] and sensor [19,20] industries. They are also widely used in solar energy [21,22].…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on the ZnSe Surface: Synthesis, Morphological and Photoluminescent Properties

Suchikova

Lazarenko

Ковачов

et al. 2021

Phys. Chem. Solid St.

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Nanostructured zinc selenide has been obtained by electrochemical etching with an H2SO4:H2O:H2O5OH=4:1:1 solution used as the electrolyte. The experiment has indicated that the surface consists of two phases, namely the upper layer made up of a dense oxide film and a low-sized porous layer underneath, with a pore diameter of (30-80) nm and a thickness of interporous walls of (15-50) nm. The investigated dependence of surface porosity on the etching time allows us to explain the main stages of the crystal’s electrochemical dissolution during anodizing. The experiment has indicated the presence of three main stages, such as the formation of the Gouy and Helmholtz layers at the semiconductor/electrolyte segregation; pore formation at defect and oxide crystallite locations; spontaneous pore formation. The PL spectra of the samples under study have demonstrated three maxima. The emission band at 2.45 eV is attributable to the presence of oxides, the band at 2.78 EV can be accounted for the corresponding excitons while the band at 2.82 eV stems from quantum-dimensional effects. Chemical analysis of the samples has also indicated the presence of oxides on the surface of the nanostructure.

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Porous A3B5 compounds

Cited by 8 publications

References 11 publications

Visible cathodoluminescence from nanocrystalline GaSb obtained by mechanical milling

Visible cathodoluminescence from nanocrystalline GaSb obtained by mechanical milling

Formation of CdO/CdS/textured-ZnO/ZnO heterostructures by chemical deposition

Nanostructures on the ZnSe Surface: Synthesis, Morphological and Photoluminescent Properties

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