2011
DOI: 10.1002/pssc.201000130
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Porous germanium multilayers

Abstract: We present the reproducible fabrication of porous germanium (PGe) single‐ and multilayers. Mesoporous layers form on heavily doped 4” p‐type Ge wafers by electrochemical etching in highly concentrated HF‐based electrolytes with concentrations in a range of 30‐50 wt.%. Direct PGe formation is accompanied by a constant dissolution of the already‐formed porous layer at the electrolyte/PGe interface, hence yielding a thinner substrate after etching. This effect inhibits multilayer formation as the starting layer i… Show more

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Cited by 10 publications
(5 citation statements)
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“…Langa et al showed that PGe formation is always accompanied by a constant dissolution of the already-formed pores (4), (5). We have demonstrated the formation of single and multi-layers by electrochemical etching in highly concentrated HF-based electrolytes ( 9)- (11). The dissolution of the already-formed porous layer is avoided by alternating the etching bias from anodic to cathodic (9), thus allowing doubleand multi-layer formation.…”
Section: Introductionmentioning
confidence: 80%
“…Langa et al showed that PGe formation is always accompanied by a constant dissolution of the already-formed pores (4), (5). We have demonstrated the formation of single and multi-layers by electrochemical etching in highly concentrated HF-based electrolytes ( 9)- (11). The dissolution of the already-formed porous layer is avoided by alternating the etching bias from anodic to cathodic (9), thus allowing doubleand multi-layer formation.…”
Section: Introductionmentioning
confidence: 80%
“…Similar to silicon etching, almost all known methods of electrochemical etching of germanium are based on the use of hydrofluoric [14–16] and hydrochloric acids [17] or alkalis, [18] which make them environmentally incompatible. High toxicity and a corrosive nature of the reagents recalls for the replacement of these old technologies.…”
Section: Introductionmentioning
confidence: 99%
“…The passivated pore walls provide an energy barrier to charge transfer and inhibit the dissolution of the already formed porous layer. The same method was found by Rojas et al to be effective at forming multilayered meso-pGe. However, the realized mesoporous layers were extremely thin (<1 μm), and not suitable for the study of their structural properties.…”
Section: Introductionmentioning
confidence: 99%