2013
DOI: 10.1016/j.jeurceramsoc.2012.08.033
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Porous Si3N4 ceramics prepared via partial nitridation and SHS

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Cited by 20 publications
(9 citation statements)
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“…It is noteworthy that the linear shrinkage increases significantly at 10 vol% solid content, and the considerable shrinkage performance will change the porosity. Despite the fact that SHS completes both nitriding and sintering processes in a remarkably short period of time [24][25][26], the internal particle build-up of a low solid content (10 vol%) is so loose that dramatic sintering shrinkage occurs when the combustion wave passes through. It explains the increase in porosity when the solid content is increased from 10 to 15 vol%, which is consistent with the trend of porosity change in the green body.…”
Section: Resultsmentioning
confidence: 99%
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“…It is noteworthy that the linear shrinkage increases significantly at 10 vol% solid content, and the considerable shrinkage performance will change the porosity. Despite the fact that SHS completes both nitriding and sintering processes in a remarkably short period of time [24][25][26], the internal particle build-up of a low solid content (10 vol%) is so loose that dramatic sintering shrinkage occurs when the combustion wave passes through. It explains the increase in porosity when the solid content is increased from 10 to 15 vol%, which is consistent with the trend of porosity change in the green body.…”
Section: Resultsmentioning
confidence: 99%
“…The low-temperature eutectic phase formed by Y 2 O 3 with SiO 2 on the surface of Si 3 N 4 accelerates the atomic diffusion rate and boosts the development of elongated rod-like grains [15][16][17]. More importantly, the formation mechanism of Si 3 N 4 obtained by SHS is controlled by vapor-crystal (VC) mechanism [24][25][26]. The rapid increase in temperature (far beyond Si melting point) gives rise to a fast vaporization rate of Si and further react with N 2 , leading to the formation and growth of Si 3 N 4 on the surface of the both Si particles and Si 3 N 4 particles.…”
Section: Resultsmentioning
confidence: 99%
“…Silicon nitride possesses low thermal expansion coefficient . high strength and stiffness, high thermal conductivity, outstanding thermal shock resistance, and excellent resistance to wear . Besides, α‐Si 3 N 4 is an important wide band gap semiconductor (5.3 eV), resulting in good optical and electrical properties.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] For the porous Si 3 N 4 ceramics, it is important to tailor the porosity and mechanical properties for the applications, such as filter, random, and catalyst supports. [1][2][3][4][5] For the porous Si 3 N 4 ceramics, it is important to tailor the porosity and mechanical properties for the applications, such as filter, random, and catalyst supports.…”
Section: Introductionmentioning
confidence: 99%
“…P OROUS silicon nitride (Si 3 N 4 ) ceramics show superior mechanical properties, such as high strength, good thermal shock resistance, high strain and damage tolerance, gaining interest for a numerous engineering applications, at room or high temperatures including molten metal filters, catalyst supports, sensors, and separation membranes. [1][2][3][4][5] For the porous Si 3 N 4 ceramics, it is important to tailor the porosity and mechanical properties for the applications, such as filter, random, and catalyst supports. Sometimes porosity higher than 50% was desirable to get good permeability and low dielectric constant; however, it is not easy to get due to the shrinkage, which was dependent on the quality of the starting powder, such as particle size and impurity.…”
Section: Introductionmentioning
confidence: 99%