Porous SiC Preparation, Characterization and Morphology

Ke, Yanxiong; Shishkin, Y.; Devaty, Robert P.; Choyke, W. J.

doi:10.1002/9780470751817.ch1

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Table 1 Electrochemical Polishing Experimental Conditions An...1

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2009

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“…The observation of the rougher carbon-face is consistent with our previous experiments [9][10][11][12], which show that the electrochemical reaction rate is slowest on the silicon-face and fastest on the carbon-face. Mixed silicon-carbon faces have intermediate etch rates.…”

Section: Table 1 Electrochemical Polishing Experimental Conditions An...supporting

confidence: 92%

Electrochemical Polishing of p-Type 4H SiC

Yan

Devaty

et al. 2009

MSF

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This article discusses the electrochemical polishing of silicon-face p-type 4H SiC using diluted aqueous HF solution. Etchings on the silicon and carbon faces of SiC samples are performed and compared. The experimental results show that the RMS surface roughness of the electrochemically polished Si-face could be as low as about 2 nm. Carbon-face electrochemical polishing gives a rougher surface. Therefore, silicon-face 4H SiC is a better candidate for MEMS processing. The underlying mechanism is also discussed.

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Section: Table 1 Electrochemical Polishing Experimental Conditions An...supporting

confidence: 92%

Electrochemical Polishing of p-Type 4H SiC

Yan

Devaty

et al. 2009

MSF

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Comparative columnar porous etching studies on n‐type 6H SiC crystalline faces

Devaty

Choyke

2008

Physica Status Solidi (b)

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Comparative photo‐electrochemical etchings have been performed on the Si‐face, C‐face and a‐face of n‐type 6H SiC. Two kinds of columnar pores are developed: nano‐columnar (∼20 nm diameter) and macro‐columnar (∼one µm diameter). The time dependences of the current densities during the etchings are discussed. Our results show that the nano‐columnar pore formation is associated with the anisotropic electrochemical oxidation reaction rate on the different crystal faces. Our experiments show that, in the case of 6H SiC, the C‐face should be used for nano‐columnar pore formation. The electrochemical oxidation rate increases with the surface C atom density of SiC. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Porous SiC Preparation, Characterization and Morphology

Cited by 2 publications

References 36 publications

Electrochemical Polishing of p-Type 4H SiC

Electrochemical Polishing of p-Type 4H SiC

Comparative columnar porous etching studies on n‐type 6H SiC crystalline faces

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