2010
DOI: 10.3390/ma3020943
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Porous Silicon—A Versatile Host Material

Abstract: This work reviews the use of porous silicon (PS) as a nanomaterial which is extensively investigated and utilized for various applications, e.g., in the fields of optics, sensor technology and biomedicine. Furthermore the combination of PS with one or more materials which are also nanostructured due to their deposition within the porous matrix is discussed. Such nanocompounds offer a broad avenue of new and interesting properties depending on the kind of involved materials as well as on their morphology. The f… Show more

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Cited by 176 publications
(127 citation statements)
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“…Silicon is the most common semi-conductor 5 on Earth and is a non-pollutant material. Therefore, nano-structured Silicon has been intensively studied experimentally and theoretically for its optical [3,4] or thermal properties [5, 6,7] among a plethora of other properties. The importance of thermal management of nano-structures has arisen as the electronic devices became smaller and more powerful.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon is the most common semi-conductor 5 on Earth and is a non-pollutant material. Therefore, nano-structured Silicon has been intensively studied experimentally and theoretically for its optical [3,4] or thermal properties [5, 6,7] among a plethora of other properties. The importance of thermal management of nano-structures has arisen as the electronic devices became smaller and more powerful.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, nanoporous thin films have been widely studied for their potential applications in thermoelectrics, 1-17 gas sensors, 18 and thermal management. [19][20][21] For thermoelectrics, the effectiveness of a material is evaluated by its thermoelectric figure of merit (ZT), defined as ZT ¼ S 2 rT/k, where S, r, k, and T represent Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Resistance dopants also affect the pore size based on the density of dopant. Silicon with a pore size of 2-4 nm can be formed using silicon-type n and p dopants that have low and medium density, silicon with pore size of 5-50 nm can be generated using a dopant with high density and silicon with pore size of 50 nm to several 10 m can be formed using a dopant with medium density [45]. This is because the mechanism of formation of the vent holes needs to justify the dissolution of the ion [19].…”
Section: New Research On Silicon -Structure Properties Technologymentioning
confidence: 99%