Porous silicon microstructure as studied by transmission electron microscopy

Chuang, Shih-Cheng; Collins, S.D.; Smith, Robert L.

doi:10.1063/1.102239

Cited by 62 publications

(18 citation statements)

References 13 publications

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“…A sponge like morphology of PS has been characterized in terms of fractals (an intricate infrastructure consisting of a hierarchy of pores within pores) within certain finite length scale [53]. Both, quantum confinement of electrons in the nanowire and the contribution of defect/disordered states present in this system are important to explain the origin of luminescence in PS [25].The presence of disordered/amorphous phase has been reported earlier from EPR measurements [54].…”

Section: Porous Siliconmentioning

confidence: 95%

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Singha

Dhar

Roy

2005

American Journal of Physics

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Modern materials science requires efficient processing and characterization techniques for low dimensional systems. Raman spectroscopy is an important non-destructive tool, which provides enormous information on these materials. This understanding is not only interesting in its own right from a physicist's point of view, but can also be of considerable importance in optoelectronics and device applications of these materials in nanotechnology. The commercial Raman spectrometers are quite expensive. In this article, we have presented a relatively less expensive set-up with homebuilt collection optics attachment. The details of the instrumentation have been described. Studies on four classes of nanostructures -Ge nanoparticles, porous silicon (nanowire), carbon nanotubes and 2D InGaAs quantum layers, demonstrate that this unit can be of use in teaching and research on nanomaterials.

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Section: Porous Siliconmentioning

confidence: 95%

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Singha

Dhar

Roy

2005

American Journal of Physics

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“…Branched pores are generally smaller than the primary pores. 40,393,448,449 The degree of branching and interpore connection depends strongly on doping concentration. For heavily doped materials, pores are generally branched.…”

Section: Influence Of Anodization Parameters On Microstructure Of Psimentioning

confidence: 99%

Silicon Porosification: State of the Art

Korotcenkov

Cho

2010

Critical Reviews in Solid State and Materials Sciences

152

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“…Cross-section transmission electron miscroscopy of porous silicon (Chuang, Collins & Smith, 1989) has shown that large pores have a distribution between 400 and 2500 A, regardless of dopant type or anode condition. In a sample prepared with current density at 10 mA cm -2 and with HF concentration at 10%, pores of --~ 500 A separated by --~ 3200 A were observed.…”

Section: Applicability Of Og'q~ Scans For Structural Analysismentioning

confidence: 99%

X-ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection

Morelhão¹,

Cardoso²

1996

J Appl Cryst

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In this work, a method that takes advantage of the threedimensional nature of the X-ray multiple-diffraction (MD) phenomenon for evaluating the crystalline perfection of semiconductors is proposed. The energy-transfer process among the MD beams can occur in a kinematical (secondary extinction) or a dynamical (primary extinction) regime. The effects that each regime can have on MD Bragg condition are theoretically investigated. The method provides information on size and misorientation of perfect-crystal regions as well as on the probability of interaction between them. The perfection of GaAs and Ge (001) surfaces after mechanical and/or chemical polishing has been investigated with this method and, as an extension of its applicability, porous silicon and GaAs (001) with Se ions implanted were also investigated.

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Porous silicon microstructure as studied by transmission electron microscopy

Abstract: A transmission electron microscopy study of microstructural defects in proton implanted silicon

Cited by 62 publications

References 13 publications

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

A nondestructive tool for nanomaterials: Raman and photoluminescence spectroscopy

Silicon Porosification: State of the Art

X-ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection

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