Porous Silicon NDR-Based High Power RF Oscillator Diode

Lin, Jia-Chuan; Wan, Liang-Fang; Liu, Kuan-Wen; Lo, Kuo-Chang; Yeh, Mei‐Ling; Wang, Shui-Jinn

doi:10.1109/led.2017.2692768

IEEE Electron Device Lett.

2017

DOI: 10.1109/led.2017.2692768

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Porous Silicon NDR-Based High Power RF Oscillator Diode

Jia-Chuan Lin

Liang-Fang Wan

Kuan-Wen Liu

et al.

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Cited by 5 publications

(2 citation statements)

References 35 publications

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“…Devices with negative differential resistance (NDR) exhibit multiple threshold voltages, making them attractive for multivalue logic systems , and radio frequency oscillators . NDR devices are based on the transition of carrier transport from quantum mechanical tunnelling to thermionic emission by sweeping the applied voltage .…”

mentioning

confidence: 99%

“…D evices with negative differential resistance (NDR) exhibit multiple threshold voltages, making them attractive for multivalue logic systems 1,2 and radio frequency oscillators. 3 NDR devices are based on the transition of carrier transport from quantum mechanical tunnelling to thermionic emission by sweeping the applied voltage. 4 To use NDR for functional devices, the output characteristics of the transistor in the NDR regime should have a high peak current (I peak ) and a high peakto-valley current ratio (PVCR).…”

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confidence: 99%

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Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Kim,

Sarkar,

Wang

et al. 2024

Nano Lett.

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Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p-and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n-and ptype junctions based on vertical heterostructures of MoS 2 and WSe 2 using van der Waals (vdW) contacts. The p−n junction shows negative differential resistance (NDR) due to Fowler−Nordheim (F−N) tunneling through the triangular barrier formed by applying a global back-gate bias (V GS ). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS 2 and WSe 2 leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global V GS , and h-BN tunnel barriers exhibit NDR with a peak current (I peak ) of 315 μA, suggesting that the approach may be useful for applications.

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mentioning

confidence: 99%

mentioning

confidence: 99%

Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Kim,

Sarkar,

Wang

et al. 2024

Nano Lett.

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Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe₂/2H-MoS₂ Heterostructure

Huo,

Qu,

Meng

et al. 2024

Nano Lett.

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Negative differential resistance (NDR) devices with a low peak-to-valley voltage difference (ΔV) exhibit a high cut off frequency and low power consumption efficiency, which is significant for fabricating high-performance oscillators. However, achieving an ultralow ΔV is challenging. In this work, we report the first construction of an NDR device utilizing a van der Waals heterostructure composed of semimetallic Td-WTe 2 and semiconducting 2H-MoS 2 . Our findings reveal that the narrow energy region of the decreasing density of states (DOS) above the Fermi level of WTe 2 acts as a narrow band gap, facilitating type-III band alignment with MoS 2 and enabling band-to-band tunneling-based NDR transport. Notably, the NDR device exhibits an ultralow ΔV of approximately 0.01 V, which is at least an order of magnitude lower than previously reported values. This work not only introduces a new approach for NDR device fabrication but also provides new insights into the pivotal role of Td-WTe 2 in NDR transport.

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Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2

Kim,

Moon,

Han

2024

Applied Physics Letters

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Germanium arsenide (GeAs) from the IV–V semiconductor family has drawn attention for its anisotropic optical and electrical characteristics as a robust p-type semiconductor with high mobility. Despite its potential, the scope of applications for two-dimensional (2D) GeAs remains limited. In this study, we investigate the in-series integration of GeAs and SnS2 for complementary inverter operation, a crucial element in logic circuits. Moreover, the resulting in-series field-effect transistors reveal a previously undocumented anti-ambipolar behavior in this configuration, with a peak-to-valley ratio exceeding 5000 at a drain-source bias of 2 V. This anti-ambipolar characteristic operates regardless of the direction of current flow, which is rarely seen in conventional anti-ambipolar transistors built with hetero-stacked p–n junctions. Moreover, the in-series structure demonstrates stable operation as a complementary inverter, highlighting the versatile potential of p-type 2D GeAs in diverse optoelectronic applications. This work contributes insights into the transport characteristics of GeAs and its interconnected arrangement with SnS2, offering valuable implications for the development of advanced 2D material-based devices.

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Porous Silicon NDR-Based High Power RF Oscillator Diode

Cited by 5 publications

References 35 publications

Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe₂/2H-MoS₂ Heterostructure

Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2

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About

Porous Silicon NDR-Based High Power RF Oscillator Diode

Cited by 5 publications

References 35 publications

Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures

Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe2/2H-MoS2 Heterostructure

Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2

Contact Info

Product

Resources

About

Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Room Temperature Negative Differential Resistance with High Peak Current in MoS₂/WSe₂ Heterostructures

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe₂/2H-MoS₂ Heterostructure