Porous Silicon Physics and Device Applications: A Status Report

Fauchet, Philippe M.; Behren, J. von; Hirschman, K.D.; Tsybeskov, L.; Duttagupta, S. P.

doi:10.1002/(sici)1521-396x(199801)165:1<3::aid-pssa3>3.0.co;2-t

Cited by 32 publications

(7 citation statements)

References 40 publications

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“…The disadvantages of porous Si are the wet fabrication procedures that are difficult to integrate into current microelectronics, the strong deterioration of the mechanical properties with increasing porosity [8] and its EL degradation during operation [6,9]. The latter problem can be avoided by oxidation and leads to device lifetimes in the order of several weeks [10].…”

Section: Requirements Of the Optoelectronicsmentioning

confidence: 99%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

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The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

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Section: Requirements Of the Optoelectronicsmentioning

confidence: 99%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

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“…The restoration of degraded PL in several semiconductor systems requires high temperature annealing [3][4][5][6] . Unlike these systems, the original PL intensity in Si/SiGe nanostructures can be restored simply by warming to room temperature; it is quite unlikely therefore, that the observed PL degradation is caused by photo/thermo-induced generation of structural defects.…”

Section: Discussionmentioning

confidence: 99%

Reversible Degradation of Photoluminescence in Si/SiGe Three Dimensional Nanostructures

et al. 2012

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We report the degradation of low temperature photoluminescence (PL) from Si/SiGe threedimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ~ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to ~ 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.

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“…Light emission from Si, an indirect gap semiconductor, is coupled to low-dimensional nanostructures (quantum dots or wires) created during porosification of bulk silicon. The efficiency may reach 10% at room temperature [32]. Optically active structures, such as all-PSi LED's have been realized and show interesting electroluminescent properties [33].…”

Section: Applications Optical Systems and Transducersmentioning

confidence: 96%

MEMS applications of porous silicon

Benecke

Splinter

2001

SPIE Proceedings

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Porous silicon fabricated by partial electrochemical dissolution of bulk silicon, shows outstanding material properties. The nanostructure of the remaining Si-skeleton is used for specific optical devices, such as emitters and filters. The high internal surface of the material opens new opportunities for different types of microsensors and -actuators and microsystem concepts. The porous layers can be used as sacrificial layers due to the high reactivity of the material which leads to a new class of micromachined MEMS devices. A brief overview on the historic evolution of the material is given. The base technologies for the fabrication of porous silicon layers are described. An overview on specific applications is given to demonstrate the potential of the material and the technology behind.

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Porous Silicon Physics and Device Applications: A Status Report

Cited by 32 publications

References 40 publications

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Reversible Degradation of Photoluminescence in Si/SiGe Three Dimensional Nanostructures

MEMS applications of porous silicon

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